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The Effect of Hydrogenation on the Electrical Properties of Crystalline Silicon

Published online by Cambridge University Press:  03 September 2012

Jacques I. Pankove
Jacques I. Pankove*
Affiliation:
Department of Electrical & Computer Engineering, University of Colorado, Boulder, Colorado 80309–0425 and National Renewable Energy Laboratory, Golden, Colorado S0401
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Abstract

Hydrogen ties Si dangling bonds at defects as well as near impurities. Defect passivation leads to dramatically lower surface recombination and increased minority carrier lifetime. Dopant neutralization increases the resistivity of the crystal and the mobility of carriers. The neutralization of donors and acceptors is optimum at different temperatures. Deep levels can also be neutralized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 357
Copyright
Copyright © Materials Research Society 1992

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References

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