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The Effect of Hydrogenation on the Electrical Properties of Crystalline Silicon
Published online by Cambridge University Press: 03 September 2012
Abstract
Hydrogen ties Si dangling bonds at defects as well as near impurities. Defect passivation leads to dramatically lower surface recombination and increased minority carrier lifetime. Dopant neutralization increases the resistivity of the crystal and the mobility of carriers. The neutralization of donors and acceptors is optimum at different temperatures. Deep levels can also be neutralized.
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- Copyright © Materials Research Society 1992
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