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Effect of Ge Pre-amorphization on Junction Characteristics for Low Energy B Implants

Published online by Cambridge University Press:  17 March 2011

Jinning Liu  and
Sandeep Mehta
Jinning Liu
Affiliation:
Varian Semiconductor Equipment Associates Gloucester, MA 01930
Sandeep Mehta
Affiliation:
Varian Semiconductor Equipment Associates Gloucester, MA 01930
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Abstract

The drive towards developing deep sub-micron CMOS devices places more challenges on semiconductor processing. From the standpoint of doping technology, the challenge is to achieve ultra-shallow p+/n source/drain extension junctions for PMOS. Among the various approaches being pursued to meet this challenge, pre-amorphization was used to curtail channeling of the as-implanted Boron. The effect of pre-amorphization on junction depth and junction sheet resistance in the ultra-low implant energy regime is investigated in this study. Pre-amorphization was achieved with Ge implant. B was implanted at energies of 250eV to 5keV and at a dose of 1×1015cm−2 into crystalline and pre-amorphized wafers. Both spike anneal at 1050°C and furnace anneal at 500°C to 750°C were performed after B implants. In all spike anneal cases, the pre-amorphized wafers exhibit higher sheet resistance and shallower junction depth than crystalline wafers. In all furnace anneal cases, shallower junction depth as well as lower sheet resistance can be achieved with pre-amorphized wafers. Higher pre-amorphization energy induces lower sheet resistance after both furnace and rapid thermal anneal (RTA).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B4.6
Copyright
Copyright © Materials Research Society 2000

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