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The Effect of Gate Geometry on the Charging Characteristics of Metal Nanocrystal Memories

Published online by Cambridge University Press:  01 February 2011

Anirudh Gorur-Seetharam ,
Chungho Lee  and
Edwin C. Kan
Anirudh Gorur-Seetharam
Affiliation:
School of Electrical and Computer Engineering, Cornell University
Chungho Lee
Affiliation:
School of Electrical and Computer Engineering, Cornell University
Edwin C. Kan
Affiliation:
School of Electrical and Computer Engineering, Cornell University
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Abstract

This study presents the effect of gate geometry on the charging characteristics of metal nanocrystal memories. The effect is studied by varying the perimeter to area ratio, number of convex corners and concave corners of the gate of a metal-oxide-semiconductor (MOS) capacitor with embedded gold nanocrystals. It can be observed that the nanocrystal charging rate increases for a smaller perimeter to area ratio. The presence of concave and convex corners increases the nanocrystal charging rate. Based on this study it is expected that gate geometries with low perimeter to area ratio and with selected convex and concave corners would increase the nanocrystal charging rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 789 , 2003 , N3.28
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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