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Effect of Gas Phase Hydrogen-Dilution on the Nucleation, Growth, and Interfaces Of a-Si1-xCx:H

Published online by Cambridge University Press:  01 January 1993

Yiwei Lu ,
Ilsin An ,
M. Gunes ,
M. Wakagi ,
C.R. Wronski  and
R.W. Collins
Yiwei Lu
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
Ilsin An
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
M. Gunes
Affiliation:
Also with the Department of Electrical and Computer Engineering.
M. Wakagi
Affiliation:
Also with the Department of Electrical and Computer Engineering. Hitachi Research Laboratory, Hitachi, Ltd., Hitachi-shi, 319-, Japan.
C.R. Wronski
Affiliation:
Also with the Department of Electrical and Computer Engineering.
R.W. Collins
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
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Abstract

The microstructural evolution of a-Si1-xCx:H with an optical gap of 1.95 eV, prepared by plasma-enhanced chemical vapor deposition (PECVD), has been studied versus gas phase H2- dilution by real time spectroscopic ellipsometry. As the H2/(CH4+SiH4) flow ratio is increased to 24, the monolayer-scale features of the growth process suggest an enhancement in precursor diffusion on substrate and film surfaces. Such features include a reduction in nucleation density, extensive surface smoothening during coalescence, and an increase the structural stability and density of the final film. We suggest a causal connection between these characteristics, and the photoelectronic properties of the film, which also improve with H2-dilution. Potentially detrimental effects of H2 dilution when a-Si1-xCx:H is deposited on TCO’s, including metal contamination at interfaces with Sn02 and H-diffusion into ZnO, are also characterized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 31
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Matsuda, A. and Tanaka, K., J. Non-Cryst. Solids 97 & 98. 1367 (1987).Google Scholar
[2] Li, Y.-M., Catalano, A., and Fieselman, B., Mater. Res. Soc. Proc. 258, 923 (1992).Google Scholar
[3] Bullot, J. and Schmidt, M.P., Phys. Status Solidi B 142, 345 (1987).Google Scholar
[4] Camargo, S.S. and Beyer, W., J. Non-Cryst. Solids 114, 807 (1989).Google Scholar
[5] Street, R.A., Phys. Rev. B 44, 10610 (1991).Google Scholar
[6] Collins, R.W., Rev. Sci. Instrum. 61, 2029 (1990).Google Scholar
[7] Li, Y.M., An, I., Nguyen, H.V., Wronski, C.R., and Collins, R.W., Phys. Rev. Lett. 68, 2814 (1992); see also: An, I., Nguyen, H. V., Nguyen, N.V., and Collins, R.W., Phys. Rev. Lett. 65, 2274 (1990).Google Scholar
[8] Mazor, A., Srolovitz, D.J., Hagan, P.S., and Bukiet, B.G., Phys. Rev. Lett. 60, 424 (1988); Karunasiri, R.P.U., Bruinsma, R., and Rudnick, J., Phys. Rev. Lett. 62, 788 (1989).Google Scholar
[9] Collins, R.W., J. Non-Cryst. Solids, 114 160 (1989).Google Scholar
[10] An, I. and Collins, R.W., unpublished work (1993).Google Scholar
[11] Kumar, S. and Drevillon, B., J. Appl. Phys. 65, 3023 (1989).Google Scholar