The Effect of Ga Content on the Recombination Behavior of Grain Boundaries in Cu(In,Ga)Se2 Solar Cells

Harvey Guthrey; Miguel Contreras; Mowafak Al-Jassim

doi:10.1557/opl.2014.419

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The Effect of Ga Content on the Recombination Behavior of Grain Boundaries in Cu(In,Ga)Se2 Solar Cells

Volume 1670
Harvey Guthrey ^(a1), Miguel Contreras ^(a1) and Mowafak Al-Jassim ^(a1)
DOI: https://doi.org/10.1557/opl.2014.419

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The Effect of Ga Content on the Recombination Behavior of Grain Boundaries in Cu(In,Ga)Se2 Solar Cells

Volume 1670
Harvey Guthrey ^(a1), Miguel Contreras ^(a1) and Mowafak Al-Jassim ^(a1)
DOI: https://doi.org/10.1557/opl.2014.419

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

The Effect of Ga Content on the Recombination Behavior of Grain Boundaries in Cu(In,Ga)Se2 Solar Cells

Volume 1670
Harvey Guthrey ^(a1), Miguel Contreras ^(a1) and Mowafak Al-Jassim ^(a1)
DOI: https://doi.org/10.1557/opl.2014.419

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