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Effect of Excitation Frequency on the Performance of Amorphous Silicon Alloy Solar Cells

Published online by Cambridge University Press:  10 February 2011

J. Yang ,
S. Sugiyama  and
S. Guha
J. Yang
Affiliation:
United Solar Systems Corp., 1100 West Maple Rd., Troy, MI 48084
S. Sugiyama
Affiliation:
United Solar Systems Corp., 1100 West Maple Rd., Troy, MI 48084
S. Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Rd., Troy, MI 48084
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Abstract

We have studied amorphous silicon alloy solar cells made by using a modified-very-highfrequency glow discharge at 75 MHz with a deposition rate of ∼6 Å/s. The solar cell performance is compared with those made from conventional glow discharge at 13.56 MHz with lower deposition rates. Cells made at ∼6 Å/s with 75 MHz showed comparable stabilized efficiency to those made at ∼3 Å/s with 13.56 MHz. The best performance, however, was obtained with ∼1 Å/s, including a stabilized 9.3% a-Si alloy single-junction cell employing conventional glow discharge technique. Using 75 MHz, we have achieved 11.1% and 10.0% initial active-area efficiencies for a-Si alloy and a-SiGe alloy n i p cells, respectively. An initial efficiency of 11.0% has also been obtained in a dual bandgap double-junction structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 157
Copyright
Copyright © Materials Research Society 1998

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References

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