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Effect of Electric Field and Current Injection on the Main Electron Trap in Bulk GaAs

Published online by Cambridge University Press:  15 February 2011

S. Makram–Ebeid
S. Makram–Ebeid*
Affiliation:
Laboratoires d'Electronique et de Physique Appliquée 3, avenue Descartes, 94450, Limeil–Brévannes (France)
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Abstract

The dark capacitive transients related to the main electron trap in bulk and VPE GaAs have been studied in detail. The low temperature low field transients are induced by electrons injected from the metal counter electrode. Both hot electron capture and impact ionization effects are observed. At high fields, a phonon assisted tunneling model accounts for the observations and yields the values of the Franck Condon Shift Sw and the energy w of the phonon coupled to the level. These values are found to be in good agreement with other independent estimates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 495
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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