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The Effect of Doping On Nitrogen Activation Energy Level In 4H-SiC

Published online by Cambridge University Press:  10 February 2011

A. O. Evwaraye ,
S. R. Smith  and
W. C. Mitchel
A. O. Evwaraye
Affiliation:
University of Dayton, Physics Department, 300 College Park, Dayton, OH 45469-2314
S. R. Smith
Affiliation:
University of Dayton Research Institute, 300 College Park, Dayton, OH 45469-0178
W. C. Mitchel
Affiliation:
Materials & Manufacturing Directorate, Air Force Research Laboratory, MLPO Wright-Patterson Air Force Base, OH 45377-7707
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Abstract

Thermal admittance spectroscopy has been used to study the thermal activation energy of nitrogen at the hexagonal and cubic sites in 4H-SiC as function of net doping concentration. The net doping concentration- of te samples, which was determined from 1/C2 vs. V plots, ranges from 1.5 × 1014 cm−3 to 4 × 1018 cm−3. The thermal activation energy of nitrogen was determined to be Ee O.054 eV and Ee O.101 eV for nitrogen at hexagonal and cubic sites respectively for ND - NA ≤ 1016 cm−3. As the free carrier concentration increases from 1016 cm−3 to 1.0 × 1018 cm3, the thermal activation energy of nitrogen at the hexagonal site decreases from 54 meV to 24 meV. At ND - NA ≥1.0 × 10 cm−3 hopping conduction is the only conduction mechanism and has an activation energy of 3-9 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 187
Copyright
Copyright © Materials Research Society 1998

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