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Effect of Deposition Temperature on the Photoresponse of Crystallized Hydrogenated Amorphous Silicon Films

Published online by Cambridge University Press:  28 February 2011

Nagarajan Sridhar ,
D. D. L. Chung ,
W. A. Anderson  and
J. Coleman
Nagarajan Sridhar
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, Buffalo NY 14260-4400, and Also with Department of Mechanical and Aerospace Engineering
D. D. L. Chung
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, Buffalo NY 14260-4400, and Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
W. A. Anderson
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, Buffalo NY 14260-4400, and Also with Department of Electrical and Computer Engineering
J. Coleman
Affiliation:
Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
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Abstract

The deposition temperature of hydrogenated amorphous silicon films deposited by dc glow discharge was found to affect the photoresponse (ratio of the photo to dark conductivity) after crystallization of the film. This effect depended on the crystallization technique. For crystallization by laser annealing, the photoresponse (0.15 - 1.5) increased with increasing deposition temperature (150 - 300 °C) due to the increase in SiH and SiH2 bonding, as shown by infrared spectroscopy. For crystallization by furnace annealing (e.g. 650 °C, 50 h), the photoresponse (0.08 - 0) decreased with increasing deposition temperature (150 - 300 °C) due to the decrease in grain size and crystallinity as shown by x-ray diffraction; the complete loss in hydrogen during furnace annealing made the photoresponse low and the silicon-hydrogen bonding effect immaterial. Thus, laser crystallization at the highest deposition temperature gave the highest photoresponse.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 921
Copyright
Copyright © Materials Research Society 1995

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References

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