Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-06T06:06:36.401Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect of Damage Density Profile on Moving specles in Ion-Induced Reactions

Published online by Cambridge University Press:  28 February 2011

K. Tao ,
C. A. Hewett ,
S. S. Lau ,
Ch. Buchal  and
D. B. Poker
K. Tao
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California San Diego, La Jolla, CA 92093
C. A. Hewett
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California San Diego, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California San Diego, La Jolla, CA 92093
Ch. Buchal
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Get access

Abstract

We present evidence in this study that the moving species under ion mixing conditions are affected by the implantation damage distribution in the sample. This observation holds for metal-semiconductor, metal-metal and semiconductorsemiconductor systems. The direction of thermal annealing and atomic transport appears to play a role in ion-mixing as well. When these two factors are in the same direction, only one dominant moving species is observed. When these two factors are in opposite directions, both constituents can contribute to the atomic transport in ion mixing.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 431
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Pai, C. S., Lau, S. S., Poker, D. B., and Hung, L. S., J. Appl. Phys., 58(1985) 4172.CrossRefGoogle Scholar
2. Pai, C.S., Lau, S.S., Poker, D.B., and Hung, L.S., J. Appl. Phys., 58(1985) 4178.CrossRefGoogle Scholar
3. Sawada, T., Pai, C.S., Lau, S.S., Poker, D. B., and Buchal, Ch., accepted for publication in J. Mat. Res. (1986).Google Scholar
4. Hung, L. S., Mayer, J. W., Pai, C. S., and Lau, S. S., J. Apply. Phys., 58(1985) 1527.Google Scholar
5. Affolter, K., Zhao, X.-A., and Nicolet, M.-A., J. Appl. Phys., 58(1985) 1527.Google Scholar
6. D'Heurle, F. M., Tsai, M. Y., Peterson, C. S., and Stritzker, B., J. Appl, Phys.,53 (1982) 3067 Google Scholar
7. Hung, L.S. and Mayer, J.W., MRS Symposia Proceedings, Vol.54(1986) 197.CrossRefGoogle Scholar
8. See for example, Lau, S. S., Liu, B. X., and Nicolet, M.-A., Nucl. Instrum. and Meth., 209/210 (1983) 93.Google Scholar
9. Biersack, J. P. and Haggmark, L. G., Nucl. Instrum. and Meth., 174(1980) 25–7.CrossRefGoogle Scholar
10 Rehn, L.E. and Okamoto, P. R. in Phase Transformations During Irradiation (ed. Nolti, F.V., Applied Science), London (1983) p. 250.Google Scholar
11. Rehn, L. E. and Okamoto, P.R. in Phase Transformations During Irradiation (ed. Nolti, F.V., Applied Science, London (1983) p. 260.Google Scholar
12. Tao, K., Hewett, C. A., Lau, S. S., Buchal, Ch., and Poker, D.B., accepted for publication in Nucl. Instrum. and Meth. (1986).Google Scholar