Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T02:22:35.307Z Has data issue: false hasContentIssue false

Effect of CdTe thickness reduction in high efficiency CdS/CdTe solar cells

Published online by Cambridge University Press:  21 March 2011

Akhlesh Gupta
Affiliation:
Dept. of Physics and Astronomy, −Univ. of Toledo, Toledo, OH. 43606
I. Matulionis
Affiliation:
Dept. of Physics and Astronomy, −Univ. of Toledo, Toledo, OH. 43606
J. Drayton
Affiliation:
Dept. of Physics and Astronomy, −Univ. of Toledo, Toledo, OH. 43606
A.D. Compaan
Affiliation:
Dept. of Physics and Astronomy, −Univ. of Toledo, Toledo, OH. 43606
Get access

Abstract

High efficiency CdTe solar cells are typically grown with CdTe thicknesses from 3 to 15 μm, although the thickness required for 90% absorption of the incident irradiation at 800 nm is only ∼1 μm. In this paper, we present the effect of CdTe thickness reduction on the performance of CdS/CdTe solar cells in which both the CdS and CdTe films were grown by sputtering. We produced a series of cells with different CdTe thickness (from 0.5 to 3.0 μm), and held the CdS thickness and back-contact-processing constant. The effect of CdTe thickness reduction on the diffusion of CdS into CdTe was studied using optical absorption and x-ray diffraction techniques. Only slight decreases occur in open-circuit voltage, short-circuit current, and fill factor with decrease in CdTe film thickness to 1.0 μm. Almost 10% efficient cells were obtained with 1 μm CdTe. Below 1 μm, all cell parameters decrease more rapidly, including the red quantum efficiency.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rose, D., Powell, R., Jayamaha, U., Maltby, M., Giolando, D., McMaster, A., Kormanyos, K., Faykosh, G., Klopping, J. and Dorer, G., Proc. 28th IEEE Photovoltaic Specialists Conference-2000 (IEEE Piscataway, NJ., to be published).Google Scholar
2. Ferekides, C., Britt, J., Ma, Y., and Killian, L., Proc. 23rd IEEE Photovoltaic Specialists Conf.-1993 (IEEE Piscataway, NJ.) p. 389.Google Scholar
3. Wu, X., Ribelin, R., Dhere, T.G., Albin, D.S., Gessert, T.A., Asher, S., Levi, D.H., Mason, A., Moutinho, H.R. and Sheldon, P., Proc. 28th IEEE Photovoltaic Specialists Conference-2000 (IEEE Piscataway, NJ., to be published)Google Scholar
4. Shao, M., Fischer, A., Grecu, D., Jayamaha, U., Bykov, E., Contreras-Puente, G., Bohn, R.G., and Compaan, A.D., Appl. Phys. Lett. 69, 30453047 (1996).Google Scholar
5. Cunningham, D.W. and Skinner, D.E., Apollo(R) Thin Film Process Development: Phase 2 Technical Report, May 1999-April 2000. 36 pp.; NICH Report No. SR-520-28710 (available at www.nrel.gov).Google Scholar
6. Gessert, T., Asher, S., and Narayanswamy, C., Proc. 28th IEEE Photovoltaic Specialists Conference-2000 (IEEE Piscataway, NJ., to be published).Google Scholar
7. McCandless, B.E., Birkmire, R.W., Jensen, D.G., Phillips, J.E., and Youm, I., 14th NREL/SNL Photovoltaics Progam Review, ed. by Witt, Al-Jassim, and Gee, p. 647 (1997) (AIP CP394).Google Scholar
8. Mao, D., Feng, L.H., Zhu, Y., Tang, J., Song, W., Collins, R., Williamson, D.L., and Trefny, J.U., 13th NREL Photovoltaics Program Review Meeting, AIP Conf. Proc. 353,p. 352 (1996).Google Scholar
9. Compaan, A.D., Feng, Z., Contreras-Puente, G., Narayanswamy, C., and Fischer, A., Mat. Res. Soc. Symp. Proc. 426, 367 (1996).Google Scholar
10. Dobson, K.D., Visoly-Fisher, I., Jayakrishnan, R., Gartsman, K., Hodes, G., & Cahen, D., Mat. Res. Soc. Symp. Proc. (2001)(symposium H, to be published).Google Scholar