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Effect of Buffer Structure on the Performance of a-Si:H/a-Si:H Tandem Solar Cells

Published online by Cambridge University Press:  27 June 2011

C.H. Hsu ,
C.Y. Lee ,
P.H. Cheng ,
C.K. Chuang  and
C.C. Tsai
C.H. Hsu
Affiliation:
Department of Photonics, National Chiao Tung University, Hsinchu, Taiwan
C.Y. Lee
Affiliation:
Department of Photonics, National Chiao Tung University, Hsinchu, Taiwan
P.H. Cheng
Affiliation:
Department of Photonics, National Chiao Tung University, Hsinchu, Taiwan
C.K. Chuang
Affiliation:
Department of Photonics, National Chiao Tung University, Hsinchu, Taiwan
C.C. Tsai
Affiliation:
Department of Photonics, National Chiao Tung University, Hsinchu, Taiwan
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Abstract

The study focuses on the influence of the hydrogenated amorphous silicon carbide (a-SiC:H) buffer layer in hydrogenated amorphous silicon (a-Si:H) single-junction and tandem thin-film solar cells. By increasing the undoped a-SiC:H buffer layer thickness from 6nm to 12nm, the JSC in single-junction cell was significantly improved, and the efficiency was increased by 4.5%. The buffer layer also effectively improves the efficiency of the a-Si:H/a-Si:H tandem cells by 7% as a result of the increase in open-circuit voltage (VOC) and short-circuit current (JSC). Although the bottom cell absorbs less short-wavelength photons, the wider-bandgap doped and buffer layers were still necessary for improving the cell efficiency. Presumably, this is because these wider-bandgap layers allow more photons to reach the bottom cell. Also, they can reduce interface recombination.

Keywords

photovoltaicplasma-enhanced CVD (PECVD) (deposition)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a17-13
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).10.1063/1.89674Google Scholar
2. Yang, J. and Guha, S., Appl. Phys. Lett. 61, 2917 (1992).10.1063/1.108021Google Scholar
3. Bennett, M. and Rajan, K., J. Appl. Phys. 67, 4161 (1990).10.1063/1.344979Google Scholar
4. Wieder, S., Rech, B., Beneking, C., Siebke, F., Reetz, W., and Wagner, H., Proceedings of the 13th European Photovoltaic Solar Energy Conference 234 (2005).Google Scholar
5. Arya, R. R., Catalano, A. and Oswald, R. S., Appl. Phys. Lett. 49, 1089 (1986).10.1063/1.97430Google Scholar
6. Lim, K. S., Konagai, M. and Tajahashi, K., J. Appl. Phys. 56, 538 (1984).10.1063/1.333943Google Scholar
7. Bullot, J. and Schmidt, M. P., Phys. Stat. Sol. (b). 143, 345 (1987).10.1002/pssb.2221430202Google Scholar
8. Cheng, P. H., Liang, S. W., Lin, Y. P., Hsu, H. J., Hsu, C. H. and Tsai, C. C., Mat. Res. Soc. Proc.. of 2011 Spring Meeting, Symposium A (to be published).Google Scholar
9. Shen, D. S., Schropp, R.E.I., Chatham, H., Hoilingsworth, R. E., Shat, P.K. and Xi, J., Appl. Phys. Lett. 56, 1871 (1990).10.1063/1.103073Google Scholar