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Effect of Boron and Phosphorus Ion Implantation on a-SixC1-x:H Thin Films

Published online by Cambridge University Press:  21 February 2011

F. Demichelis ,
R. Galloni ,
C. F. Pirri ,
R. Rizzolid ,
C. Summonte  and
E. Tresso
F. Demichelis
Affiliation:
Dipartimento di Fisica Politecnico, Tormo (Italy)
R. Galloni
Affiliation:
Laboratori CNR-LAMEL, Bologna (Italy)
C. F. Pirri
Affiliation:
Dipartimento di Fisica Politecnico, Tormo (Italy)
R. Rizzolid
Affiliation:
Laboratori CNR-LAMEL, Bologna (Italy)
C. Summonte
Affiliation:
Laboratori CNR-LAMEL, Bologna (Italy)
E. Tresso
Affiliation:
Dipartimento di Fisica Politecnico, Tormo (Italy)
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Abstract

Ion implantation of boron and phosphorus in device quality a-SixC1-x:H films deposited by Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition (UHV PECVD) has been performed. The effects of damage and of damage recovering after annealing were investigated by optical absorption, electrical conductivity and infrared (IR) spectroscopy measurements. It is found that samples doped by phosphorus implantation can have dark conductivities as high as those obtained on samples doped with boron, either by ion implantation or gas phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 93
Copyright
Copyright © Materials Research Society 1992

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References

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