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The Effect of Bonding Disorder on the Vibrational Features of Amorphous Carbon Based Binary Alloys

Published online by Cambridge University Press:  10 February 2011

G. Compagnini
Affiliation:
Dipartimento di Scienze Chimiche V.le A.Doria 6 – 95125 Catania (Italy)
G. Foti
Affiliation:
Istituto Nazionale per la Fisica della Materia Corso Italia 57 – 95129 Catania (Italy)
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Abstract

In this work we report some results concerning Raman characterisation of covalently bonded amorphous carbon based thin films (∼ 100 nm) of binary alloys, obtained by ion implantation of carbon ions into silicon and germanium matrices. It will be shown that compositional disorder is present in our samples even below the stoichiometric concentration (∼50 carbon at.%) as deduced by the presence of three vibrational features in the Raman spectra. A quantitative measure of the compositional disorder will be also given by using either Raman or infrared spectroscopies in samples with different carbon content.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Bullot, J. and Schmidt, M.P.: Phys. Stat. Sol. 143, 345 (1987)Google Scholar
[2] Robertson, J.: Pbyl. Mag. B66, 615 (1992)Google Scholar
[3] Street, R.A.: “Hydrogenated Amorphous Silicon”, Cambridge University Press (London, 1991)Google Scholar
[4] Coffa, S., Priolo, F., Poate, J.M. and Glarum, S.H.: Nucl. Instr. Meth. B80/81, 603 (1993)Google Scholar
[5] Compagnini, G. and Calcagno, L.: Mat. Sci.&Eng. R13, 193 (1994)Google Scholar
[6] Galli, G., Martin, R.M., Car, R and Parrinello, M.: Phys. Rev. B42, 7470 (1990)Google Scholar
[7] Finocchi, F., Galli, G., Parrinello, M. and Bartoni, C.M.: Phys. Rev. Lett. 68, 3044 (1992)Google Scholar
[8] Kelires, P.C.: Phys. Rev. 46, 10048 (1992)Google Scholar
[9] Compagnini, G. and Baratta, G.A.: Appl. Phys. Lett. 61, 1796 (1992)Google Scholar
[10] Tuinsra, F. and Koenig, J.L.: J. Chem. Phys. 53, 1126 (1970)Google Scholar
[11] Tersoff, J.: Phys. Rev. 44, 12039 (1991)Google Scholar
[12] Tersoff, J.: Phys. Rev. 49, 16349 (1994)Google Scholar
[13] Yoshikawa, M., Katagiri, G., Ishida, H., Ischitani, A. and Akamatsu, T.: J. Appl. Phys. 64, 6464 (1988)Google Scholar
[14] Dillon, R.O., Woollam, A. and Katkamant, V.: Phys. Rev. B29, 3482 (1984)Google Scholar
[15] Calcagno, L., Compagnini, G., Foti, G., Grimaldi, M.G. and Musumeci, P.: Nucl. Instr. Meth. B120, 121 (1996)Google Scholar
[16] Musumeci, P., Reitano, R., Calcagno, L., Roccaforte, F., Grimaldi, M.G., Makhtari, M. Phyl. Mag.: B76, 323(1997)Google Scholar