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Effect of barrier layers on the texture and microstructure of Copper films

Published online by Cambridge University Press:  01 February 2011

Tejodher Muppidi  and
David P Field
Tejodher Muppidi
Affiliation:
School of MME, Washington State University, Pullman, WA. John E Sanchez Advanced Micro Devices, Sunnyvale, CA.
David P Field
Affiliation:
School of MME, Washington State University, Pullman, WA. John E Sanchez Advanced Micro Devices, Sunnyvale, CA.
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Abstract

The microstructure of interconnect material is know to influence its electromigration and stress-voiding properties. In addition to many factors responsible for the microstructure development, the barrier layer could be a major contributing factor as it forms the substrate for the copper films above. The microstructure of the barrier films based on its deposition technique could determine the final microstructure of the copper film. In the present work we examine the effect of two different barrier layers (Ta and TaN) and different stackings of these two materials on the microstructure on the copper seed (PVD) and electroplated films using EBSD, AFM and XRD. The results show that the plated films have a predominantly (111) texture and uniform grain size. But the (111) texture maximum varied with the barrier layer stacking underneath the plated film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E2.2
Copyright
Copyright © Materials Research Society 2003

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References

1. Hu, C.K., Luther, B., Kaufman, F.B., Hummel, J., Uzoh, C., Pearson, D.J., Thin Solid Films, vol.262, pp.84–92, 1995.Google Scholar
2.“Barriers against Copper diffusion into Silicon and drift through Silicondioxide,” MRS bulletin 1994; 5 (August): 30–40 Google Scholar
3. Holloway, Karen, Fryer, Peter M., Cabral, Cyril Jr, Harper, J. M. E., Bailey, P. J., and Kelleher, K. H., Journal of Applied Physics 1992; 71 (11): 5433–44Google Scholar
4. Proost, J., Hirato, T., Furuhara, T., Maex, K., and Celis, J.P., J. of Appl. Phys., Vol 87, No 6, 15 March 2000 Google Scholar
5. Kolawa, E., Chen, J.S., Reid, J.S., Pokela, P.J., and Nicolet, M.A., J.of Appl. Phys. (1 Aug. 1991) vol.70, no.3, pp. 1369–73.Google Scholar
6. Holloway, Karen, Fryer, Peter M., Cabral, Cyril Jr, Harper, J. M. E., Bailey, P. J., and Kelleher, K. H., J. of Appl. Phys. 1992; 71 (11): 5433–44.Google Scholar
7. Vanasupa, Linda, Joo, Young-Chang, Besser, Paul R., and Pramanick, Shekhar, J. of Appl. Phys. (1 March 1999) vol 85, no. 5, pp 2583–91Google Scholar
8. Matthies, S. and Vinel, G.W., Material Science Forum (Proc. ICOTOM – 10), 157, 1641 (1994).Google Scholar
9. Greiser, J., Müllner, P. and Arzt, E., Acta Materilia 49(2001) 1041–50.Google Scholar
10. Beyer, G., Satta, A., Schuhmacher, J., Maex, K., Besling, W., Kilpela, O., Sprey, H. and Tempel, G., Microelectronic Engineering 64 (2002) 233–245 Google Scholar