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Effect of Annealing on Microstructure in (Doped and Undoped) Hydrogenated Amorphous Silicon Films

Published online by Cambridge University Press:  07 July 2014

W. Beyer ,
W. Hilgers ,
D. Lennartz ,
F.C. Maier ,
N.H. Nickel ,
F. Pennartz  and
P. Prunici
W. Beyer
Affiliation:
Institut für Silizium-Photovoltaik, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstrasse 5, D-12489 Berlin, Germany IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
W. Hilgers
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
D. Lennartz
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
F.C. Maier
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
N.H. Nickel
Affiliation:
Institut für Silizium-Photovoltaik, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstrasse 5, D-12489 Berlin, Germany
F. Pennartz
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
P. Prunici
Affiliation:
Malibu GmbH & Co.KG, Böttcherstrasse 7, D-33609, Bielefeld, Germany
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Abstract

Laser heating and annealing of hydrogenated amorphous silicon (a-Si:H) films is of interest for improved material properties. Due to the variety of possible laser treatments with regard to wavelength, pulse duration, scan time etc., the definition of laser impact on the material is a challenge which we try to approach by comparing properties of laser and oven treated materials. Here we report on the effect of oven heat treatment (up to TA= 575°C) on microstructure and hydrogen content of hydrogenated amorphous silicon films, as detected by measurements of infrared absorption and of effusion of hydrogen as well as of implanted helium. The latter technique has been found to measure isolated voids (cavities) of the size of silicon divacancies and larger. Undoped as well as phosphorus and boron doped plasma-deposited a-Si:H films of various hydrogen content (< 15 at.%) were investigated, including undoped device grade a-Si:H. The results show little indication for void-related microstructure in the as-deposited and annealed state for material with a concentration of silicon bonded hydrogen below 5 at. %. At higher hydrogen concentration, evidence is found that hydrogen out-diffusion due to annealing causes isolated voids in concentrations up to about 1020 cm-3. A possible mechanism for the annealing induced (micro-)void generation is discussed.

Keywords

amorphousannealingmicrostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1666: Symposium A – Film-Silicon Science and Technology , 2014 , mrss14-1666-a14-01
Copyright
Copyright © Materials Research Society 2014 

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References

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