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Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE

Published online by Cambridge University Press:  21 March 2011

X.Q. Xiu ,
R. Zhang ,
D.Q. Lu ,
L. Gu ,
B. Shen ,
Y. Shi  and
Y.D. Zheng
X.Q. Xiu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P. R. China
R. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P. R. China
D.Q. Lu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P. R. China
L. Gu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P. R. China
B. Shen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Y. Shi
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Y.D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P. R. China
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Abstract

The effect of introduction of additional HCl on the surface morphology and structural properties of hydride vapor phase epitaxy grown GaN during growth is investigated, and high quality GaN with smooth surface on sapphire is obtained by adding the additional HCl into the HVPE reactor. The result is attributed to the control of polarity of GaN films during growth. The additional HCl altered the equilibrium at the GaN growth front, and the reversible reaction decreased the nucleation density or growth rate. Further, lower growth rate promote the surface diffusion and the coalescence over (0001) plane. Additional HCl may improve the surface morphology by suppressing the (000-1) polarity growth in the initial stage of the growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.25.1
Copyright
Copyright © Materials Research Society 2002

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