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Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

Published online by Cambridge University Press:  01 February 2011

G.Z. Pan ,
E.W. Chang  and
Y. Rahmat-Samii
G.Z. Pan
Affiliation:
Microfabrication Laboratory Department of Electrical Engineering University of California at Los Angeles Los Angeles, CA 90095-1594.
E.W. Chang
Affiliation:
Microfabrication Laboratory Department of Electrical Engineering University of California at Los Angeles Los Angeles, CA 90095-1594.
Y. Rahmat-Samii
Affiliation:
Microfabrication Laboratory Department of Electrical Engineering University of California at Los Angeles Los Angeles, CA 90095-1594.
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Abstract

We comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B10.5
Copyright
Copyright © Materials Research Society 2002

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References

1. Kittl, J.A., Hong, Q. Z., Yang, H., Yu, N., et al., Thin Solid Films 332 404 (1998).Google Scholar
2. Goto, K., Fushida, A., Watanabe, J., et al., IEDM Tech. Digest 1995 449 (1995).Google Scholar
3. Lawrence, M., Dass, A., Fraser, D. B., and Wei, C. S., Appl. Phys. Lett. 58 1308 (1991).Google Scholar
4. Gottlieb, U., Nava, F., Affronte, M., et al. in Properties of Metal Silicides, edited by Maex, K., Possum, M. Van (INSPEC, London, 1995) pp.18–192.Google Scholar