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EBIC Spectroscopy - A New Approach to Microscale Characterization of Deep Levels in Semi-Insulating GaAs

Published online by Cambridge University Press:  28 February 2011

C.-J. Li ,
Q. Sun ,
J. Lagowski  and
H.C. Gatos
C.-J. Li
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
Q. Sun
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J. Lagowski
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
H.C. Gatos
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We propose a new approach to the defect characterization in semiinsulating (SI) GaAs which combines the high spatial resolution and scanning capability of the Electron Beam-Induced Current (EBIC) mode of Scanning Electron Microscopy (SEM) with the advantages of optical and thermal spectroscopies employed in the identification of deep levels. In the PHOTO-EBIC approach a DC electron beam and a chopped subbandgap monochromatic light impinge on the SI GaAs through a semi-transparent Au electrode. The photoinduced modulation of the EBIC as a function of the subbandgap energy of incident photons constitutes a structure which corresponds to the photoionization of deep levels. In the thermally stimulated EBIC (TS-EBIC) the deep levels are filled at low temperature by the excess carriers generated by an electron beam. Subsequently, the changes of EBIC as a function of temperature constitute a spectrum of peaks which correspond to different deep levels. The peak position determines the deep level energy while the magnitude of peaks can be used for the assessment of the relative concentration of deep levels located within the small volume probed by the electron beam.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 441
Copyright
Copyright © Materials Research Society 1985

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