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Ebic Investigation of Hydrogen Passivated Structural Defects in Efg Silicon Ribbon

Published online by Cambridge University Press:  15 February 2011

T. D. Sullivan  and
D. G. AST
T. D. Sullivan
Affiliation:
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
D. G. AST
Affiliation:
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
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Abstract

EBIC contrast of structural defects in as-received and hydrogen passivated polysilicon ribbon is studied using aluminum Schottky barrier diodes. Enhanced charge collection after passivation is demonstrated by comparing the EBIC signal from two sections of a split ribbon, one half of which was passivated. Electrical activity of specific linear defects before and after passivation is examined by recording charge collection profiles across these defects under standardized conditions of beam voltage and current. Such measurements show that passivation does reduce the electrical activity of selected defects. Possible reasons for this behavior will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 303
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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