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Early Detection of the Metallization Quality Using Moderately Accelerated Electromigration Stress Conditions

Published online by Cambridge University Press:  10 February 2011

A. Scorzoni ,
I. De Munari ,
M. Impronta ,
R. Balboni ,
N. Kelaidis ,
S. Foley  and
M. Forde
A. Scorzoni
Affiliation:
CNR - Istituto LAMEL, via P. Gobetti 101, 40129 Bologna, Italy, [email protected]
I. De Munari
Affiliation:
MTI, Universitá di Parma, v.le delle Scienze, 43100 Parma, Italy
M. Impronta
Affiliation:
CNR - Istituto LAMEL, via P. Gobetti 101, 40129 Bologna, Italy, [email protected]
R. Balboni
Affiliation:
CNR - Istituto LAMEL, via P. Gobetti 101, 40129 Bologna, Italy, [email protected]
N. Kelaidis
Affiliation:
CNR - Istituto LAMEL, via P. Gobetti 101, 40129 Bologna, Italy, [email protected] NCSR Demokritos - Inst. of Microelectronics, 153 10 Aghia Paraskevi Attikis, Athens, Greece
S. Foley
Affiliation:
NMRC, University College, Lee Maltings, Prospect row, Cork, Ireland
M. Forde
Affiliation:
NMRC, University College, Lee Maltings, Prospect row, Cork, Ireland
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Abstract

In this work we use a wafer-level, High Resolution Resistance Measuring Technique (HRRMT) to detect fabrication faults of Al-Cu interconnections. Experiments have been performed on two distinct sets of metal lines. The first set includes two lots of 4 μm wide lines which, once tested at moderately accelerated stress conditions, gave largely different life times. A microstructural analysis confirmed a major defectivity of the lot with shorter life time. An accurate examination of the early resistance variations revealed the presence of two distinct and subsequent phases, namely an initial pseudo-parabolic resistance increase followed by a linear resistance drop. Significant differences between the resistance behaviour of the two lots were detected during the first stage, lasting a few hours. Measurable differences could even be detected in the first few minutes. A second group of experiments was launched in order to assess the capability of HRRMT as in-line monitors. Samples from four wafers, one reference wafer and three wafers with intentional process variations, have been tested using our HRRMT at constant temperature and current, simulating an in-line production test. The standard life time of the four wafers have also been collected. Preliminary measurements highlight that a change of life time due to process variation corresponds to changes of the resistance behaviour in the first hours of test. These results pave the way for a new application of high resolution methods to assess the quality of a metallization system in a reasonable amount of time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 15
Copyright
Copyright © Materials Research Society 1998

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References

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