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Dynamic Infrared Electro-optic Response of Soluble Organic Semiconductors in Thin Film Transistors

Published online by Cambridge University Press:  25 January 2013

Emily G. Bittle ,
Joseph W. Brill  and
Joseph P. Straley
Emily G. Bittle
Affiliation:
Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055USA
Joseph W. Brill
Affiliation:
Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055USA
Joseph P. Straley
Affiliation:
Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055USA
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Abstract

We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate, bottom contact field-effect transistors (FETs.) Because of the buried metal layer effect the maximum response, due to absorption in the charge layer, will be for a dielectric film ∼ 1/4 of a wavelength (in the dielectric) (e.g. ∼ 1 micron thick in the infrared.) Results are presented for FETs prepared with both spin-cast polymer and alumina dielectrics prepared by atomic layer deposition. At low frequencies the results are fit to solutions to a non-linear differential equation describing the spatial dependence of flowing charge in the FET channel, which allows us to study multiple crystals forming across one set of drain-source contacts. FETs prepared on alumina dielectrics show interesting deviations from the model at high frequencies, possibly due to increased contact impedance.

Keywords

organicelectrical propertiesoptoelectronic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1501: Symposium P – Single-Crystalline Organic and Polymer Semiconductors—Fundamentals and Devices , 2013 , mrsf12-1501-p06-09
Copyright
Copyright © Materials Research Society 2013

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References

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