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Dynamic Characteristics of Amorphous Silicon Thin Film Transistors

Published online by Cambridge University Press:  26 February 2011

C. van Berkel ,
J. R. Hughes  and
M. J. Powell
C. van Berkel
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
J. R. Hughes
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
M. J. Powell
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
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Abstract

In this paper we report on the dynamic characteristics of amorphous silicon thin film transistors in the time interval between ips to 1s after gate switch-on. The experimental results show a continuous change in the threshold voltage in this t'me regime. A model based on carrier thermalisation to the deep states including the spatial dependence of the thermalisation process in the band-banding region is presented to account for these results. The effect responsible for the observed time dependence of the threshold voltage is shown to be the trapping of charge in deep states in the bulk amorphous silicon away from the interface with the gate dielectric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 445
Copyright
Copyright © Materials Research Society 1987

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References

1. Powell, M.J. and Nicholls, D.H., lEE proc. 130 2 (1983).Google Scholar
2. Powell, M.J., Appl. Phys. Lett. 43 597 (1983).Google Scholar
3. Hepburn, A.R., Marshall, J.M., Main, C., Powell, M.J. and van Berkel, C., Phys. Rev. Lett. 56 2215 (1986).Google Scholar
4. Powell, M.J., Easton, B.C. and Nicholls, D.H., J. Appl. Phys. 53 5068 (1982)Google Scholar
5. Khan, B.A., Adler, D. and Senturia, S.D., J. Appl. Phys. 60 2875 (1986).Google Scholar
6. Tiedje, T. and Rose, A., Solid State Comm. 37 49 (1980).Google Scholar
7. Orenstein, J. and Kastner, M., Phys. Rev. Lett. 46 1421 (1981).Google Scholar
8. Schiff, E.A., Phys. Rev. B 24 6189 (1981).Google Scholar
9. Marshall, J.M., Michiel, H. and Adriaenssens, G.J., Phil. Mag. B 47 211 (1983); J.M. Marshall and C. Main, Phil. Mag. B 471.Google Scholar
10. Halpern, V., Phil. Mag. B 51 L49 (1985).Google Scholar
11. Pfister, G. and Scher, H., Adv. Phys. 27 747 (1978).Google Scholar
12. Powell, M.J. and Pritchard, J., J. Appl. Phys. 54 3244 (1983).Google Scholar