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DX-Like Centers in IV-VI.

Published online by Cambridge University Press:  26 February 2011

Dmitriy R. Khokhlov
Dmitriy R. Khokhlov*
Affiliation:
Physics Department, Moscow State University, Moscow 119899, Russia
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Abstract

Up to the recent times it was believed that observation of the DX-centers is restricted to the rather wide-bandgap III-V and II-VI semiconductors. However it becomes obvious now that some of the narrow-gap IV-VI semiconductors doped with the group III elements reveal the features of DX-centers. A range of features, such as negative-U behavior, large lattice relaxation, metastability of the local excited states, narrow bandgap - make the effects resulting from the DX-like behavior much more complicated than in the “classical” materials with the DX-centers. We review the most unusual recent results obtained in the field that originate from the specifics of the DX-like centers in IV-VI.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 947
Copyright
Copyright © Materials Research Society 1995

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