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DX Centers and III-V Device Performance

Published online by Cambridge University Press:  16 February 2011

Elias Muñoz-Merino
Elias Muñoz-Merino*
Affiliation:
Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, Madrid, Spain
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Abstract

The properties of deep donor states (DX's centers) in III-V alloys are reviewed in relation to their influence on the device characteristics and limitations. Because of the systematic research being performed on AlGaAs, most of the information presented refers to such material. The electron thermal emission and capture properties of the DX's are then related to the DC and noise characteristics in heterojunction transistors. The optical properties of DX centers indicate a clear difference between unipolar and bipolar device performance at low temperatures. The technical efforts to avoid DX centers will also be described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 49
Copyright
Copyright © Materials Research Society 1990

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References

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