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The DX Center: Evidence for Charge Capture Via an Excited Intermediate State

Published online by Cambridge University Press:  25 February 2011

Thomas N. Theis  and
Patricia M. Mooney
Thomas N. Theis
Affiliation:
IBM Research, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Patricia M. Mooney
Affiliation:
IBM Research, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

We review three important experimental results which suggest that electron capture and emission by the DX center in AlxGa1-xAs proceeds via an excited intermediate state: the very different dependencies of the thermal capture and emission rates on alloy composition, the exponential dependence of the thermal capture rate on the quasi-equilibrium Fermi energy, and the thermal activation of the hot electron capture rate. None of these results is readily explained by a conventional lattice relaxation model, in which an electron is captured directly from the lowest lying band edge, but each can be simply explained if the dominant channel for multiphonon capture is via a transition state which lies well above the band edge. This picture is consistent with recent pseudopotential calculations which predict that the lattice relaxed state (the DX state) is stabilized by capture of more than one electron, since such a model naturally admits the possibility of an intermediate one-electron state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 729
Copyright
Copyright © Materials Research Society 1990

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References

1 Hjalmarson, H.P., Vogel, P., Wolford, D.J., and Dow, J.D., Phys. Rev. Lett. 44, 810 (1980).Google Scholar
2 Lang, D.V., Logan, R.A., and Jaros, M., Phys. Rev. B 19, 1015, (1979).Google Scholar
3 Theis, T.N., Kuech, T.F., Palmateer, L.F., and Mooney, P.M., Inst. Phys. Conf. Ser. 74, 241 (1985) (Proc. Int. Conf. on GaΛs and Related Compounds, Biarritz, 1984); T.N. Theis in Defects in Semiconductors, edited by H.J. von Bardeleben, (Switzerland, Trans Tech, 1986) pp 393-8.Google Scholar
4 Dmochowski, J.E., Langer, J., Raczynska, J., and Jantsch, W., Phys. Rev. B 38, 3276 (1988).Google Scholar
5 Theis, T.N., Inst. Phys. Conf. Ser. 95, 307 (1989) (Proc. Int. Conf. Shallow Impurities in Semiconductors, Linköping, Sweden, 1988).Google Scholar
6 Mizuta, M., Tachikawa, M., Kukimoto, H., and Minomura, S., Jpn. J. Appl. Phys. 24, L143 (1985).Google Scholar
7 Tachikawa, M., Fujisawa, T., Kukimoto, H., Shibata, A., Oomi, G., and Minomura, S., Jpn. J. Appl. Phys. 24 L893 (1985).Google Scholar
8 Maude, D.K., Portal, J.C., Dmowski, L., Foster, T., Eaves, L., Nathan, M., Heiblum, M., Harris, J.J., and Beall, R.B., Phys. Rev. Lett. 59, 815 (1987).Google Scholar
9 Maguire, J., Murray, R., and Newman, R.C., Appl. Phys. Lett. 50, 516 (1987).Google Scholar
10 Eaves, L., Foster, T.J., Maude, D.K., Toombs, G.A., Murray, R., Newman, R.C., Portal, J.C., Dmowski, L., Beall, R.B., Harris, J.J., Nathan, M.I., and Heiblum, M., Inst. Phys. Conf. Ser. 91, 355 (1988) (Proc. Int. Symp. on Gallium Arsenide and Related Compounds, Heraklion, Greece, 1987).Google Scholar
11 Henning, J.C.M., and Ansems, J.P.M., Semicond. Sci. and Technol. 2, 1 (1987).Google Scholar
12 Resca, L., Lohrmann, D.J., and Graft, R.D., Phys. Rev. B 36, 2741 (1987).Google Scholar
13 Bourgoin, J.C. and Mauger, A., Appl. Phys. Lett. 53, 749 (1988).Google Scholar
14 Bourgoin, J.C., Feng, S.L. and von Bardeleben, H.J., Phys. Rev. B 40, 7663 (1989).Google Scholar
15 Hjalmarson, H.P. and Drummond, T.J., Appl. Phys. Lett. 48, 656 (1986) and Phys. Rev. Lett. 60, 2410(1988).Google Scholar
16 Yamagouchi, E., J. Phys. Soc. Japan 56, 2835 (1987).Google Scholar
17 Oshiyama, A., in Defects in Semiconductors 15 Ed. Ferenczi, G., Materials Science Forum vols. 38–41 (Trans Tech Publications, Switzerland, 1989) p. 287.Google Scholar
18 Oshiyama, A. and Ohnishi, S., Phys. Rev. B 33 4320 (1986).Google Scholar
19 Mooney, P.M., Northrop, G.A., Morgan, T.N., and Grimmeiss, U.G., Phys. Rev. B 37, 8298 (1988).Google Scholar
20 Chadi, D.J. and Chang, K.J., Phys. Rev. Lett. 61, 873 (1988) and Phys. Rev. B 49, 10366 (1989).Google Scholar
21 Morgan, T.N. in Defects in Semiconductors 15, Ed. Ferenczi, G., Materials Science Forum 38–41 (Trans Tech Publications, Switzerland, 1989) p. 1079.Google Scholar
22 Mooney, P.M., Theis, T.N., and Wright, S.L., Appl. Phys. Lett. 53, 2546 (1988).Google Scholar
23 Watkins, G.D., in Defects in Semiconductors, Eds. Narayan, J. and Tan, T.Y. (North Holland, New York, 1981) p. 21.Google Scholar
24 Theis, T.N., Morgan, T.N., Parker, B.D., and Wright, S.L. in Defects in Semiconductors 15, Ed. Ferenczi, G. (Trans Tech Publications, Ltd., Switzerland, 1989) p. 1073.Google Scholar
25 Langer, J.M., Dmochowski, J.E. and Dobaczewski, L., Ed. Bourgoin, J., Mat. Science Forum (Trans Tech Publications, Ltd., Switzerland, 1990) in press.Google Scholar
26 Maude, D.K., Eaves, L. and Portal, J.C., Phys. Rev. Lett. 62, 1922 (1989).Google Scholar
27 Chadi, D.J., Chang, K.Y. and Walukiewicz, W., Phys. Rev. Lett. 62, 1923 (1989).Google Scholar
28 O’Reilly, E.P., Appl. Phys. Lett. 55, 1409 (1989).Google Scholar
29 Dietle, T., Dmochowski, J.R., Kossut, J., Langer, J.M. and Swiatek, K., unpublished.Google Scholar
30 Khachaturyan, K.A., Awschalom, D.D., Rosen, J.R. and Weber, E.R., Phys. Rev. Lett. 63, 1311 (1989).Google Scholar
31 Majerfeld, A. and Bhattacharya, P.K., Appl. Phys. Lett. 33, 261 (1978) and P.K. Bhattacharya, A. Majerfeld and A.K. Saxena, Inst. Phys. Conf. Ser. 45, 199 (1979).Google Scholar
32 Calleja, E., Gomez, A. and Munoz, E., Appl. Phys. Lett. 52, 383 (1988).Google Scholar
33 Theis, T.N., Inst. Phys. Conf. Ser. 91, 1 (1988), Proc. of int. Symp. on GaΛs and Related Compounds, Heraklion, Greece, 1987. See also D.V. Lang in Deep Centers in Semiconductors, Ed. S.T. Pantelides (Gordon and Breach Science Publishers, New York, 1986), p. 527.Google Scholar
34 Theis, T.N., Mooney, P.M. and Wright, S.L., Phys. Rev. Lett. 60, 361 (1988).Google Scholar
35 Suski, T., Litwin-Staszewska, E., Piotrzkowski, R., Dmowski, L., Wisniewski, P., Zanotti, L., Tang, X. and Gilling, L.J., in Proc. of the 19th Int. Conf. Phys. Semiconductors, Ed. Zawadzki, W., (Inst. of Phys. of the Polish Acad. Sci., Warsaw 1988) p. 1047.Google Scholar
36 Azema, S., Mosser, V., Camassel, J., Piotrzkowski, R., Robert, J.L., Gilbart, P., Contour, J.P., Massie, J. and Marty, A., in Defects in Semiconductors 15, Ed. Ferenczi, G., Materials Science Forum Vols. 38–41, (Trans Tech Publications, Ltd., Switzerland, 1989) p. 857.Google Scholar
37 Theis, T.N. in Proc. of the 19th Int. Conf. on Phys. of Semiconductors, Ed. Zawadzki, W. (Inst. of Phys. of the Polish Acad. Sci., Warsaw, 1988) p. 1083.Google Scholar
38 Mooney, P.M., Caswell, N.S., and Wright, S.L., J. Appl. Phys. 62, 4786 (1987).Google Scholar
39 Calleja, E., Gomez, A., Munoz, E. and Camara, P., Appl. Phys. Lett, 52, 1877 (1988).Google Scholar
40 Baba, T., Mizuta, M., Fujisawa, T., Yoshino, J., and Kukimoto, H., Jpn. J. Appl. Phys. 28, L891 (1989).Google Scholar
41 Calleja, E., Garcia, F., Gomez, A., Munoz, E., Mooney, P.M., Morgan, T.N. and Wright, S.L., unpublished.Google Scholar
42 loselevich, A.S. and Rashba, E.I., Sov. Phys. JETP 64, 1137 (1986). (Zh. Eksp. Teor. Fiz. 91, 1917(1986)).Google Scholar
43 Kaniewska, M. and Kaniewski, J., Solid State Comm. 53, 485 (1985) and J. Appl. Phys. 63, 1086(1988).Google Scholar
44 Takikawa, M. and Ozeki, M., Jpn. J. Appl. Phys. 24, 303 (1985).Google Scholar
45 Dobaczewski, L. and Langer, J.M., in Defects in Semiconductors, Ed. von Bardeleben, H.J., Materials Science Forum Vols. 10–12 (Trans Tech Publications, Ltd., Switzerland, 1986) p. 399.Google Scholar
46 Theis, T.N., Parker, B.D., Solomon, P.M. and Wright, S.L., Appl. Phys. Lett. 49, 1542 (1986).Google Scholar
47 Theis, T.N. and Parker, B.D., Appl. Surf. Sci. 30, 52 (1987).Google Scholar
48 Calleja, E., Mooney, P.M., and Wright, S.L., unpublished.Google Scholar