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DX Center Energy Level in InxAl1−xAs Compounds

Published online by Cambridge University Press:  10 February 2011

Hüseyin Sari  and
Harry H. wieder
Hüseyin Sari
Affiliation:
ECE Department University of California, San Diego, CA 92093
Harry H. wieder
Affiliation:
ECE Department University of California, San Diego, CA 92093
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Abstract

The presence of DX centers in InxAl1−xAs, primarily in the indirect portion of the InxAl1−xAs bandgap, has been determined using modulation doped InxAl1−xAs/InyGa1−yAs heterostructures by means of persistent photoconductivity (PPC) and galvanomagnetic measurements. From the cooling bias experiment, the PPC, and self consistent Poisson and Schrddinger simulations the ratio of the ionized shallow donors to the DX centers is obtained. Using this ratio in the grand canonical ensemble (GCE) the energy level of DX centers is determined. It is found that the DX energy level merges with the conduction band at x ≅ 0.42 and is resonant with the conduction band in higher indium concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 151
Copyright
Copyright © Materials Research Society 1999

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References

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