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DX Center Analysis in Sn DOPED AlGaAs Layer of Double Heterostructures

Published online by Cambridge University Press:  26 February 2011

M. Kaniewska  and
J. Kaniewski
M. Kaniewska
Affiliation:
Institute of Electron Technology, AI.Lotnikow 32/46, 02-668 Warsaw, Poland
J. Kaniewski
Affiliation:
Institute of Electron Technology, AI.Lotnikow 32/46, 02-668 Warsaw, Poland
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Abstract

Capacitance as well as photovoltage response methods have been used to analyse DX centers in the N–type AlGaAs:Sn layer of double heterostructures. DLTS spectra have revealed two deep traps. The first center (ΔE1 = 0.20eV) has been interpreted as the DX center related to Sn. In this paper, it is suggested that the second trap, with thermal activation energy equal to ΔE2 = 0.33eV, is also a DX center due to Sn, connected with another final state (the L minimum) of thermal processes. C-T characteristics and DLTS spectra have been compared with photovoltage spectra to find a correlation between the trap populations and Al content. The binding energy of the trap 2, as well as the temperature dependence of the electron capture cross-section, have been determined from measurements of the transition region width. Photoionization measurements confirm that there is large lattice relaxation when an electron is captured at the trap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 579
Copyright
Copyright © Materials Research Society 1988

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References

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