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Durability and Reliability of Semiconductor Devices

Published online by Cambridge University Press:  10 February 2011

V. G. Sidorov ,
V. I. Sokolov  and
D. V. Sidorov
V. G. Sidorov
Affiliation:
Semiconductor Physics Department, State Technical University, 29 Polytechnicheskaya Str., St.Petersburg, 195251 RUSSIA, [email protected]
V. I. Sokolov
Affiliation:
Ioffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, Russia
D. V. Sidorov
Affiliation:
Semiconductor Physics Department, State Technical University, 29 Polytechnicheskaya Str., St.Petersburg, 195251 RUSSIA, [email protected]
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Abstract

The aim of the study is to discuss the most general aspects of semiconductor devices durability and reliability. The life time of a semiconductor device is related to the defect structure evolution of the crystalline and noncrystalline components involved. The driving force for the evolution of defect device structure is associated with relaxation processes of internal mechanical stresses. In this report the degradational effects in LEDs based on GaAs(Si) have been analyzed. The discussion of the necessity for research on composite materials creation is also included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 531: Symposium DD – Reliabilty of Photonics Materials & Structures , 1998 , 371
Copyright
Copyright © Materials Research Society 1998

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References

1. Vasilenko, N.D., Gorodnichenko, O.K., Maronchuk, I.E., Maronchuk, E.E., Zh. Tekh. Fiz. 50, 1355 (1980)Google Scholar
2. Korolev, V.L., Sidorov, V.G., Fiz. Tekh. Poluprovodn. 22, 1359 (1988)Google Scholar
3. Korolev, V.L., Rossin, V.V., Sidorov, V.G., Fiz. Tekh. Poluprovodn. 22, 532 (1988)Google Scholar
4. Zhilyaev, Yu.V., Rossin, V.V., Sidorov, V.G., Pis'ma Zh. Fiz. 6, 1129 (1980)Google Scholar