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Dual Role of Tin Reaction Barrier in Gold-Based Metallization to GaAs

Published online by Cambridge University Press:  22 February 2011

A. Piotrowska ,
E. Kaminska ,
M. Guziewicz ,
S. Kwiatkowski  and
A. Turos
A. Piotrowska
Affiliation:
Institute of Electron Technology, 02-668 Warsaw, Poland
E. Kaminska
Affiliation:
Institute of Electron Technology, 02-668 Warsaw, Poland
M. Guziewicz
Affiliation:
Institute of Electron Technology, 02-668 Warsaw, Poland
S. Kwiatkowski
Affiliation:
Institute of Nuclear Studies, 00-681 Warsaw, Poland
A. Turos
Affiliation:
Institute of Nuclear Studies, 00-681 Warsaw, Poland
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Abstract

The formation of ohmic contacts to p-GaAs based on Au-Zn system comprising a TiN diffusion barrier has been investigated using 2 MeV He+ RBS and the specific contact resistance measurements. It has been proved that TiN films deposited by reactive RF bias magnetron sputtering serves two purposes. First it suppresses the arsenic evaporation and thus confines the reaction between AuZn and GaAs. Second, it prevents intermixing between p-GaAs/Au(Zn) ohmic contact and an overlayer of Au.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 219
Copyright
Copyright © Materials Research Society 1993

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References

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