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Dry—Processing Induced Isolation—Degradation in GaAs Integrated Circuits

Published online by Cambridge University Press:  28 February 2011

M.F. Chang ,
C.P. Lee ,
N.H. Sheng ,
C.G. Kirkpatrick  and
R.T. Chen
M.F. Chang
Affiliation:
Rockwell International, Microelectronics Research and Development Center, Thousand Oaks, CA 91360
C.P. Lee
Affiliation:
Rockwell International, Microelectronics Research and Development Center, Thousand Oaks, CA 91360
N.H. Sheng
Affiliation:
Rockwell International, Microelectronics Research and Development Center, Thousand Oaks, CA 91360
C.G. Kirkpatrick
Affiliation:
Rockwell International, Microelectronics Research and Development Center, Thousand Oaks, CA 91360
R.T. Chen
Affiliation:
Litton Industries, Inc., Electron Devices Division, San Carlos, CA, 94070
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Abstract

Our study shows that the isolation—degradation in semi—insulating GaAs substrate is closely related to dry—processes during the device fabrication. It was found that EL2, the major electron trap in undoped LEC semiinsulating GaAs, could be passivated by plasma—assisted etchings or depositions. The passivation of EL2 causessurface leakage and leads to crosstalk in GaAs ICs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 415
Copyright
Copyright © Materials Research Society 1985

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References

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