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Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

Published online by Cambridge University Press:  10 February 2011

Jae-Won Lee ,
Hyong-Soo Park ,
Yong-Jo Park ,
Myong-Cheol Yoo ,
Tae-Il Kim ,
Hyeon-Soo Kim  and
Geun-Yong Yeom
Jae-Won Lee
Affiliation:
Photonics Lab, Samsung Advanced Institute of Technology, Suwon P.O. Box 111, Korea, [email protected]
Hyong-Soo Park
Affiliation:
Photonics Lab, Samsung Advanced Institute of Technology, Suwon P.O. Box 111, Korea, [email protected]
Yong-Jo Park
Affiliation:
Photonics Lab, Samsung Advanced Institute of Technology, Suwon P.O. Box 111, Korea, [email protected]
Myong-Cheol Yoo
Affiliation:
Photonics Lab, Samsung Advanced Institute of Technology, Suwon P.O. Box 111, Korea, [email protected]
Tae-Il Kim
Affiliation:
Photonics Lab, Samsung Advanced Institute of Technology, Suwon P.O. Box 111, Korea, [email protected]
Hyeon-Soo Kim
Affiliation:
Department of Materials Engineering, Sung Kyun Kwan University, Suwon 440–746, Korea
Geun-Yong Yeom
Affiliation:
Department of Materials Engineering, Sung Kyun Kwan University, Suwon 440–746, Korea
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Abstract

Dry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 373
Copyright
Copyright © Materials Research Society 1997

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References

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