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Double-layered Structure of Surface Modification of Low-k Dielectrics Induced by He Plasma

Published online by Cambridge University Press:  01 February 2011

Ken-Ichi Yanai ,
Tadayoshi Hasebe ,
Kouji Sumiya ,
Seiki Oguni  and
Kazuhiro Koga
Ken-Ichi Yanai
Affiliation:
Consortium for Advanced Semiconductor Materials and Related Technologies (CASMAT), 1-280, Higashi-koigakubo, Kokubunji-shi, Tokyo 185-0014, Japan
Tadayoshi Hasebe
Affiliation:
Consortium for Advanced Semiconductor Materials and Related Technologies (CASMAT), 1-280, Higashi-koigakubo, Kokubunji-shi, Tokyo 185-0014, Japan
Kouji Sumiya
Affiliation:
Consortium for Advanced Semiconductor Materials and Related Technologies (CASMAT), 1-280, Higashi-koigakubo, Kokubunji-shi, Tokyo 185-0014, Japan
Kazuhiro Koga
Affiliation:
Consortium for Advanced Semiconductor Materials and Related Technologies (CASMAT), 1-280, Higashi-koigakubo, Kokubunji-shi, Tokyo 185-0014, Japan
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Abstract

Surface modification of a p-SiOC film induced by Helium (He) plasma was investigated using various measurements. Differential Fourier transform infrared absorption (FT-IR) spectra and the etch-depth measurements with the immersion in the mixed hydrofluoric acid (HF) indicate that the almost all of Si-CH3 bonds are broken in the modification layer, resulting in carbon-depletion, an SiO2-like composition. The x-ray photoelectron spectroscopy (XPS) measurements at different take-off angles reveal that the modified surface forms a double-layered structure, a thin carbon-rich top layer (about 1 nm thick) on a thick carbon-depletion layer (about 20 nm thick) with the irradiation of He plasma over 300 W. Atomic force microscopy (AFM) observations show that the modified surface is the smoothest in the case of the carbon-depletion surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B2.3
Copyright
Copyright © Materials Research Society 2005

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References

1. Kondo, S., Tokitoh, S., Yoon, B. U., Namiki, A., Sone, A.et al., Proc. IITC 2003, pp. 86–88.Google Scholar
2. Noguchi, J., Oshima, T., Tanaka, U., Sasajima, K., Aoki, H.et al., Proc. IEDM 2003, S21P6.Google Scholar
3. Inoue, O., Jimbo, T., Katsuyama, K., and Tamaru, T., Proc. AMC 2004, pp. 369–374.Google Scholar
4. Seki, H., Inoue, K., Nagai, N., Shimada, M., Inukai, K.et al., Proc. AMC 2004, pp. 375–380.Google Scholar
5. Colburn, M., Nitta, S., Zinter, J., Chakrapani, N.et al., Proc. AMC 2003, pp. 489–493.Google Scholar