Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-27T00:38:28.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Doping Experiments in ZNO

Published online by Cambridge University Press:  21 March 2011

R.E. Stauber ,
P.A. Parilla ,
J.D. Perkins ,
J.A. Del Cueto  and
D.S. Ginley
R.E. Stauber
Affiliation:
University of Colorado, Boulder CO 80304, [email protected]
P.A. Parilla
Affiliation:
National Renewable Energy Lab, Golden CO 80401
J.D. Perkins
Affiliation:
National Renewable Energy Lab, Golden CO 80401
J.A. Del Cueto
Affiliation:
National Renewable Energy Lab, Golden CO 80401
D.S. Ginley
Affiliation:
National Renewable Energy Lab, Golden CO 80401
Get access

Abstract

This paper reports on attempts to fabricate transparent electrically conductive p-type ZnO by pulsed laser deposition (PLD) and sputtering using N2, N2O and NO gases. Expanding on the work of Kawai and coworkers [1,2], we used an ion source, rather than an ECR source in the PLD chamber to dissociate N2O gas, and explored the use of aluminum in addition to gallium as potential co-dopants. The most promising results have been obtained with DC reactive sputtering of gallium-doped zinc metal targets. A three to six order of magnitude reduction in n-type carrier density was observed when 2% of the argon sputtering gas was replaced with NO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F2.8
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Joseph, M., Tabata, H., and Kawai, T., Jpn. J. Appl. Phys. 38, L1205 (1999).Google Scholar
2. Guo, X.-L., Tabata, H., and Kawai, T., Journal of Crystal Growth 223, 135 (2001).Google Scholar
3. Yamamoto, T. and Katayama-Yoshida, H., Jpn. J. of Appl. Phys. Pt. 2, No. 2B, L166 (1999).Google Scholar
4. Yan, Y. and Zhang, S. B., submitted to Phys. Rev. Letters, (2001).Google Scholar
5. Mark, T. D. and Dunn, G. H., Electron Impact Ionization (Wien; New York: Springer-Verlag, 1985).Google Scholar
6. Date, L., Radouane, K., Caquineau, H., et al., Surface and Coatings Technology 116–119, 1042 (1999).Google Scholar