Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:44:00.020Z Has data issue: false hasContentIssue false
  • English
  • Français

Doping Effects on the Etching Chemistry of GaAs and Si

Published online by Cambridge University Press:  25 February 2011

F. A. Houle
F. A. Houle*
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120
Get access

Abstract

Doping effects on semiconductor etching rates have been proposed to be associated with field effects in the near-surface region. Detailed investigations of the chemistry of nand p-type Si and GaAs indicate that the majority carrier can also play an important role in determining the reactivity of surface intermediates, providing an independent mechanism for influencing the etch rate. A microscopic picture of central driving forces in semiconductor etching deduced from the doping cffects is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 25
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Winters, H. F. and Hlaarer, D., Phys. Rev. 1336, 6613 (1987).Google Scholar
2. Houle, F. A., J. Appl. Phys. 60, 3018 (1986); Phys. Rev. B39, 10 120 (1989).Google Scholar
3. Yarmoff, J. A. and McFeely, F. R., Phys. Rev. B38, 2057 (1988).Google Scholar
4. Houle, F. A., J. Chem. Phys. 87, 1866 (1987).Google Scholar
5. Houle, F. A., to be published.Google Scholar
6. Balooch, M., Olander, D. R. and Siekhaus, W. J., J. Vac. Sci. Technol. B 4, 794 (1986).Google Scholar
7. Hou, H., Zhang, Z., Chen, S., Su, C., Yan, W. and Vernon, M., Appl. Phys. Lett. 55, 801 (1989).Google Scholar
8. McNevin, S. C., J. Vac. Sci. Technol. B4, 1216 (1986).Google Scholar
9. Chatillon, C. and Bernard, S. C., J. Crystal Growth 71, 433 (1985).Google Scholar