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Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope

Published online by Cambridge University Press:  03 September 2012

D.I. Florescu ,
V.A. Asnin ,
L.G. Mourokh ,
Fred H. Pollak  and
R. J. Molnar
D.I. Florescu
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY 11210
V.A. Asnin
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY 11210
L.G. Mourokh
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY 11210
Fred H. Pollak
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY 11210
R. J. Molnar
Affiliation:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02420-9108
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Abstract

We have measured the doping concentration dependence of the room temperature thermal conductivity (κ) of two series of n-GaN/sapphire (0001) fabricated by hydride vapor phase epitaxy (HVPE). In both sets n decreased linearly with log n, the variation being about a factor two decrease in κ for every decade increase in n. κ ≈ 1.95 W/cm-K was obtained for one of the most lightly doped samples (n = 6.9×1016 cm−3), higher than the previously reported κ ≈ 1.7-1.8 W/cm-K on lateral epitaxial overgrown material [V.A. Asnin et al, Appl. Phys. Lett. 75, 1240 (1999)] and κ κ 1.3 W/cm-K on a thick HVPE sample [E.K. Sichel and J.I. Pankove, J. Phys. Chem. Solids 38, 330 (1977)]. The decrease in the lattice component of κ due to increased phonon scattering from both the impurities and free electrons outweighs the increase in the electronic contribution to κ.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.89
Copyright
Copyright © Materials Research Society 1999

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