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Doping Dependence of Chlorine Incorporation in SiC14-based Microcrystalline Silicon Films

Published online by Cambridge University Press:  01 February 2011

Wolfhard Beyer ,
Reinhard Carius  and
Uwe Zastrow
Wolfhard Beyer
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
Reinhard Carius
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
Uwe Zastrow
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

For SiCl4-based microcrystalline silicon films the doping dependence of chlorine and hydrogen incorporation was studied. The results reveal a Fermi level dependence with a maximum chlorine (and hydrogen) incorporation for a Fermi level somewhat above midgap. As an explanation, a Fermi level dependence of the chlorine release rate during film growth is considered, similar as valid for hydrogen diffusion and desorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A24.4
Copyright
Copyright © Materials Research Society 2005

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