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The Doping and Characterization of Erbium-Implanted Gan

Published online by Cambridge University Press:  10 February 2011

J. T. Torvik ,
R. J. Feuerstein ,
C. H. Qiu ,
J. I. Pankove  and
F. Namavar
J. T. Torvik
Affiliation:
Department of E&CE, University of Colorado, Boulder, CO 80309–0425 Astralux, Inc., 2500 Central Ave., Boulder, CO 80301–2845
R. J. Feuerstein
Affiliation:
Department of E&CE, University of Colorado, Boulder, CO 80309–0425
C. H. Qiu
Affiliation:
Astralux, Inc., 2500 Central Ave., Boulder, CO 80301–2845
J. I. Pankove
Affiliation:
Department of E&CE, University of Colorado, Boulder, CO 80309–0425 Astralux, Inc., 2500 Central Ave., Boulder, CO 80301–2845
F. Namavar
Affiliation:
Spire Corporation, 1 Patriots Park, Bedford, MA 01730–2396
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Abstract

Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and 0 implanted n-type GaN. Good device performance requires that the Er-related excitation and emission processes be efficient. Single exponential PL and EL time decays with l/e lifetimes of 2.33 ms and 1.74 ms indicates highly efficient radiative process. The Er excitation process in GaN was studied by comparing the efficiency of direct Erabsorption, electron-hole pair recombination, and hot electron (impact) excitation. The strongest Er luminescence and the lowest pump power was found using impact excitation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 579
Copyright
Copyright © Materials Research Society 1998

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