Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T01:58:01.845Z Has data issue: false hasContentIssue false
  • English
  • Français

Dopants in nanoscale ZnO

Published online by Cambridge University Press:  31 January 2011

Matt McCluskey ,
Win Maw Hlaing Oo  and
Samuel Teklemichael
Matt McCluskey
Affiliation:
[email protected], Washington State University, Dept. of Physics and Astronomy, Washington State University, Pullman, Washington, 99164-2814, United States, 5093355356
Win Maw Hlaing Oo
Affiliation:
[email protected], Washinton State University, Pullman, Washington, United States
Samuel Teklemichael
Affiliation:
[email protected], Washington State University, Pullman, Washington, United States
Get access

Abstract

Zinc oxide (ZnO) is a metal-oxide semiconductor that has attracted resurgent interest as an electronic material for a range of device applications. In our work, we have focused on how defect properties change as one goes from the bulk to the nanoscale. Infrared (IR) reflectance spectra of as-grown and hydrogen-annealed ZnO nanoparticles were measured at near-normal incidence. The as-grown particles were electrically semi-insulating, and show reflectance spectra characteristic of insulating ionic crystals. Samples annealed in hydrogen showed a significant increase in electrical conductivity and free-carrier absorption. A difference was observed in the reststrahlen line shape of the conductive sample compared to that of the as-grown sample. In addition to hydrogen doping, we successfully doped ZnO nanoparticles with Cu. To probe the electronic transitions of Cu2+ impurities in ZnO nanoparticles, IR transmission spectra were taken at liquid-helium temperatures. Two absorption peaks were observed at energies of 5781 and 5821 cm-1. Finally, we tentatively assign a series of IR spectral lines to Na acceptors.

Keywords

II-VIinfrared (IR) spectroscopynanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1174: Symposium V – Functional Metal-Oxide Nanostructures , 2009 , 1174-V07-03
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Norris, D.J. Efros, A.L. and Erwin, S.C. Science 319, 1776 (2008).Google Scholar
2 Özgür, Ü., Alivov, Ya. I. Liu, C. Teke, A. Reshchikov, M.A. Dogan, S. Avrutin, V. Cho, S.-J., and Morkoç, H., J. Appl. Phys. 98, 041301 (2005).Google Scholar
3 Look, D.C. Mater. Sci. Engin. B 80, 383 (2001).Google Scholar
4 Molnar, R.J. in Semiconductors and Semimetals 57 (Academic Press, New York, 1999), pp. 1–31.Google Scholar
5 Minami, T. MRS Bulletin 25 (8), 38 (2000).Google Scholar
6 Nuruddin, A. and Abelson, J.R. Thin Solid Films 394, 49 (2001).Google Scholar
7 Dietl, T. Ohno, H. Matsukura, F. Cibert, J. and Ferrand, D. Science 287, 1019 (2000).Google Scholar
8 Janotti, A. and Walle, C.G. Van de, Nature Materials 6, 44 (2007).Google Scholar
9 Hlaing, W.M. Oo, McCluskey, M.D. Huso, J. and Bergman, L. J. Appl. Phys. 102, 043529 (2007).Google Scholar
10 Dietz, R.E. Kamimura, H. Sturge, M.D. and Yariv, A. Phys. Rev. 132, 1559 (1963).Google Scholar
11 Garces, N.Y. Wang, L. Bai, L. Giles, N.C. Halliburton, L.E. and Cantwell, G. Appl. Phys. Lett. 81, 622 (2002).Google Scholar
12 Meyer, B.K. Stehr, J. Hofstaetter, A. Volbers, N. Zeuner, A. and Sann, J. Appl. Phys. A 88, 119 (2007).Google Scholar