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Dopant Incorporation in Silicon During Nonequilibrium Solidification: Comparison of Two Processes1

Published online by Cambridge University Press:  25 February 2011

E.P. Fogarassy ,
D.H. Lowndes ,
J. Narayan  and
C.W. White
E.P. Fogarassy
Affiliation:
Guest scientist from the Centre National de la Recherche Scientifique, Strasbourg, 67037, FRANCE
D.H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Narayan
Affiliation:
On sabbatical at the Microelectronics Center of North Carolina, Research Triangle Park, NC 27709 and the Materials Engineering Department, North Carolina State University, Raleigh, NC 27650.
C.W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

The incorporation properties of implanted or deposited Sb into the silicon lattice during laser irradiation with a UV laser has been studied. For both implanted or deposited Sb, we find a maximum substitutional concentration of 2.1 × 1021/cm3 following laser melting and solidification at V ; 6 m/sec. In both cases, substitutional solubility is limited by inter-facial instabilities which develop during regrowth. For the deposited case we observe in addition a much larger cellular microstructure which may result from convection induced instabilities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 419
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

Research sponsored by the Division of Materials Sciences, USDOE under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

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