Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:26:10.652Z Has data issue: false hasContentIssue false

Donor–Doped Lead Zirconate Titanate (PbZr1−xTixO3) Films

Published online by Cambridge University Press:  15 February 2011

Seshu B. Desu
Affiliation:
Department of Materials Science and Engineering Virginia Polytechnic Institute and State University Blacksburg, Virginia 24061.
Dilip P. Vijay
Affiliation:
Department of Materials Science and Engineering Virginia Polytechnic Institute and State University Blacksburg, Virginia 24061.
In K. Yoo
Affiliation:
Department of Materials Science and Engineering Virginia Polytechnic Institute and State University Blacksburg, Virginia 24061.
Get access

Abstract

Properties of undoped– and doped–ferroelectric PbZr1−xTixO3. films, with both Pt or RuO2 electrodes, were compared, with a view to understand the reasons for degradation of ferroelectric films. Donor–doped (e.g., Nb5+ at Ti4+ site) PbZr1−xTixO3 films, for which the PbO loss has been compensated, showed higher resistance to fatigue and low leakage currents compared to those of undoped films. The fatigue of ferroelectric films, a decrease in switchable polarization with increasing number of polarization reversals, has been attributed to the migration of oxygen vacancies and their entrapment at various interfaces (e.g., electrode/ferroelectric interface) that are present in the film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Yoo, I. K. and Desu, S. B., Mat. Sci. & Eng., B 13, 319 (1992).Google Scholar
2) Yoo, I. K. and Desu, S. B., Phys. Stat. Sol., a133, 565 (1992).Google Scholar
3) Yoo, I. K. and Desu, S. B., J. Int. Mat. Sys., 4, 490, (1993).Google Scholar
4) Desu, S. B. and Yoo, I. K., J. Electrochem. Soc., 140, L133, (1993).Google Scholar
5) Vijay, D. P. and Desu, S. B., J. Electrochem. Soc., 140, 2640 (1993).Google Scholar
6) Prisedsky, V. V., Shishkovsky, V. I. and Klimov, V. V., Ferroelectrics, 17, 465 (1978).Google Scholar
7) Takahashi, M., Jap. J. Appl. Phys., 9, 1236, (1970).CrossRefGoogle Scholar
8) Dai, G. H., Lu, P. W., Huang, X. Y., Liu, Q. S., and Xue, W. R., J. Mat. Sci: Mat. In Elect., 2, 164, (1991).Google Scholar
9) Dih, J. J. and Fulrath, R. M., J. Am. Ceram. Soc., 61, 448, (1978).Google Scholar
10) Kwok, C. K. and Desu, S. B., Mat. Res. Soc. Symp. Proc., 243, 393, (1992).Google Scholar
11) Yoo, I. K., Desu, S. B. and Xing, J., Mat. Res. Soc. Symp. Proc., 310, 165 (1993).Google Scholar