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Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  15 February 2011

T. Paskova ,
E.B. Svedberg ,
L.D. Madsen ,
R. Yakimova ,
I.G. Ivanov ,
A. Henry  and
B. Monemar
T. Paskova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Link5ping, Sweden
E.B. Svedberg
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Link5ping, Sweden
L.D. Madsen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Link5ping, Sweden
R. Yakimova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Link5ping, Sweden
I.G. Ivanov
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Link5ping, Sweden
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Link5ping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Link5ping, Sweden
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Abstract

The crystal structure and surface morphology of hydride vapour phase epitaxy grown thick (12-105 μm) GaN layers have been investigated as a function of growth rate using several structure sensitive techniques like atomic force microscopy (AFM), x-ray diffraction (XRD) in ω-2Θ and ω-rocking curve measurements as well as low temperature photoluminescence (PL). PL and XRD measurements reveal rather narrow lines: full width at half maximum (FWHM) values of the strongest donor-bound exciton line are in the range from 6.0 to1.8 meV and ω-2Θ FWHM values are between 80 and 23 arcsec indicating good structural quality of the films. The ω-rocking curves show a single peak for the thinnest films with a FWIM of 250 arcsec and multiple peaks with FWHIM of about 250-350 arcsec in thicker films indicating the formation of several high-quality domains when increasing either thickness or growth rate. Optical microscopy and AFM images reveal a domain type of morphology and also show an appearance of spiral hillocks in layers grown at growth rates exceeding a critical value. We interpret these results as dominating 2D multilayer growth at low growth rates, and competing 2D multilayer and spiral growth mechanisms at high growth rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.16
Copyright
Copyright © Materials Research Society 1999

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References

1. Detchprohm, T., Hiramatsu, K., Sawaki, N., Akasaki, I., J. Cryst. Growth 145, 192 (1994).Google Scholar
2. Molnar, R.J., Gòtz, W., Romano, L.T., Johnson, N.M., J. Cryst. Growth 178, 147 (1997).Google Scholar
3. Naniwae, K., Itoh, S., Amano, H., Itoh, K., Hiramatsu, K., Akasaki, I., J. Cryst. Growth 99, 381 (1990).Google Scholar
4. Melnik, Yu., Nikolaev, A., Nikitina, I., Vassilevski, K., Dmitriev, V., in Nitride Semiconductors, edited by Ponce, F.A., DenBaars, S.P., Meyer, B.K., Nakamura, S., Stride, S. (Mat. Res. Soc. Symp. Proc. 482, Boston, MA 1997) pp.269–276 Google Scholar
5. Usui, A., in Nitride Semiconductors, edited by Ponce, F.A., DenBaars, S.P., Meyer, B.K., Nakamura, S., Stride, S. (Mat. Res. Soc. Symp. Proc. 482, Boston, MA 1997) pp.233–244 Google Scholar
6. Itoh, N., Okamoto, K., J. Appl. Phys. 63, 1486 (1988).Google Scholar
7. Akasaki, I., Amano, H., Koide, Y., Haramatsu, K., Sawaki, N., J. Cryst. Growth 98, 209 (1989).Google Scholar
8. Goldys, E.M., Paskova, T., Ivanov, I.G., Arnaudov, B., Monemar, B., Appl. Phys. Lett. 73 (24) (1998).Google Scholar
9. Rohrer, G.S., Payne, J., Qian, W., Skowronski, M., Doverspike, K., Rowland, L.B., Gaskill, D.K., in GaN and Related Materials, edited by Ponce, F.A., Dupuis, R.D., Nakamura, S., Edmond, J.A. (Mat. Res. Soc. Symp. Proc. 395, Boston, MA 1995) pp.381–386.Google Scholar
10. Greene, J.E., presented lecture at the Second Workshop on Science and Technology of Thin Films, Trieste, Italy, 1996 (unpublished)Google Scholar