Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-14T02:35:45.197Z Has data issue: false hasContentIssue false
  • English
  • Français

A Dodson-Tsao Relaxation Approach to The Crystallographic Tilting In (100) Heteroepitaxial Systems

Published online by Cambridge University Press:  15 February 2011

Ferenc Riesz
Ferenc Riesz*
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, P. O. Box 76, H-1325 Budapest, Hungary, E-mail: [email protected]
Get access

Abstract

The tilt of epilayer lattice planes in (100) zinc blende lattice-mismatched heterostructures is calculated numerically using the Dodson-Tsao plastic relaxation model. Tilt is calculated as a function of growth temperature, initial defect density and substrate miscut angle. The results are explained by looking at the time evolution of the excess stresses of the opposing slip systems during strain relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 97
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nagai, H., J. Appl. Phys. 45, 3789 (1974).Google Scholar
2. Olsen, G. H. and Smith, R. T., Phys. Stat. Sol. A 31, 739 (1975).Google Scholar
3. Pesek, A., Hingerl, K., Riesz, F. and Lischka, K., Semicond. Sci. Technol. 6, 705 (1991).Google Scholar
4. Ayers, J. E., Ghandhi, S. K. and Schowalter, L. J., J. Cryst. Growth 113, 430 (1991).Google Scholar
5. Riesz, F., Varrio, J., Pesek, A. and Lischka, K., Appl. Surf. Sci. 75, 248 (1994).Google Scholar
6. Maigné, P. and Roth, A. P., Semicond. Sci. Technol. 7, 1 (1992).Google Scholar
7. Maigné, P. and Roth, A. P., Appl. Phys. Lett. 62, 873 (1993).Google Scholar
8. Maigné, P., Baribeau, J.-M., Coulas, D. and Desruisseaux, C., J. Appl. Phys. 75, 1837 (1994).Google Scholar
9. Chang, J. C. P. and Kavanagh, K. L., Mater. Res. Soc. Symp. Proc. 263, 457 (1992).Google Scholar
10. Mooney, P. M., LeGoues, F. K., Tersoff, J. and Chu, J. O., J. Appl. Phys 75, 3968 (1994).Google Scholar
11. Dodson, B. W. and Tsao, J. Y., Appl. Phys. Lett. 51, 1325 (1988); 52, 852(E) (1988); Ann. Rev. Mater. Sci. 19, 419 (1989).Google Scholar
12. Jain, S. C., Willis, J. R. and Bullough, R., Adv. Phys. 39, 127 (1990).Google Scholar
13. Fitzgerald, E. A., Mater. Sci. Rep. 7, 87 (1991).Google Scholar
14. Riesz, F., Czech J. Phys. 44, 131 (1994); 44, 799(E) (1994).Google Scholar
15. Krishnamoorthy, V., Lin, Y. W., Calhoun, L., Liu, H. L. and Dixon, R. H., Appl. Phys. Lett. 61, 2680 (1992).Google Scholar
16. LeGoues, F. K., Mooney, P. M., and Tersoff, J., Phys. Rev. Lett. 72, 4056 (1994).Google Scholar