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Distribution of Gap States in Highly Photosensitive a-SiC:H

Published online by Cambridge University Press:  25 February 2011

S. Akita ,
Y. Nakayama ,
M. Yamano  and
T. Kawamura
S. Akita
Affiliation:
College of Engineering, University of Osaka Prefecture Mozu-Umemachi, Sakai, Osaka 591, Japan
Y. Nakayama
Affiliation:
College of Engineering, University of Osaka Prefecture Mozu-Umemachi, Sakai, Osaka 591, Japan
M. Yamano
Affiliation:
College of Engineering, University of Osaka Prefecture Mozu-Umemachi, Sakai, Osaka 591, Japan
T. Kawamura
Affiliation:
College of Engineering, University of Osaka Prefecture Mozu-Umemachi, Sakai, Osaka 591, Japan
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Abstract

The effect of carbon incorporation into a-Si:H has been investigated in terms of gap states. The shallow and deep states are measured by a combination of two methods of the time-of-flight and the depletion discharge transient spectroscopy. The results show that the carbon incorporation of 10Z into a-Si:H leads to a slight increase in the conduction-band tail states and an extention of the deep states distribution. However, the increase in the shallow states affects little change in the electron transport properties. The origin of the deep states is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 167
Copyright
Copyright © Materials Research Society 1989

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References

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