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Distribution of Boron Atoms in Ion Implanted Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

R. C. Bowman Jr. ,
J. F. Knudsen ,
R. G. Downing  and
R. E. Kremer
R. C. Bowman Jr.
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
J. F. Knudsen
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
R. G. Downing
Affiliation:
Center for Analytical Chemistry, National Bureau of Standards, Gaithersburg, MD 20899
R. E. Kremer
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, Beaverton, OR 97006
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Abstract

The nondestructive neutron depth profiling (NDP) technique has been used to measure the boron (10B) distributions in GaAs, CdTe, Hg0.7 Cd0.3 Te, and Hg0.85 Mn0.15Te after multiple energy ion implants. The NDP results are found to be in good agreement with the theoretical ion ranges obtained from Monte Carlo computer simulations. Only minor changes in the boron profiles were seen for the chosen annealing conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 89
Copyright
Copyright © Materials Research Society 1988

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References

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