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Distribution and Characterization of Iron in Implanted Silicon Carbide

Published online by Cambridge University Press:  28 February 2011

J. Bentley ,
L. J. Romana ,
L. L. Horton  and
C. J. McHargue
J. Bentley
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN, 37831–6376.
L. J. Romana
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN, 37831–6376.
L. L. Horton
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN, 37831–6376.
C. J. McHargue
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN, 37831–6376.
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Abstract

Analytical electron microscopy (AEM) and Rutherford backscattering spectroscopy-ion channeling (RBS-C) have been used to characterize single crystal α-silicon carbide implanted at room temperature with 160 keV 57Fe ions to fluences of 1, 3, and 6×1016 ions/cm2. Best correlations among AEM, RBS, and TRIM calculations were obtained assuming a density of the amorphized implanted regions equal to that of crystalline SiC. No iron-rich precipitates or clusters were detected by AEM. Inspection of the electron energy loss fine structure for iron in the implanted specimens suggests that the iron is not metallically-bonded, supporting conclusions from earlier conversion electron Mössbauer spectroscopy (CEMS) studies. In-situ annealing surprisingly resulted in crystallization at 600°C with some redistribution of the implanted iron.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 363
Copyright
Copyright © Materials Research Society 1992

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References

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