Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T09:11:01.507Z Has data issue: false hasContentIssue false
  • English
  • Français

Dissociation of Misfit Dislocations in GeSi/{111}Si Interfaces

Published online by Cambridge University Press:  21 February 2011

Frank Ernst
Frank Ernst*
Affiliation:
Max Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraße 92, 70174 Stuttgart, Germany
Get access

Abstract

The accommodation of lattice mismatch is studied in Ge0.15Si0.85 layers grown epitaxially on {111}-oriented Si substrates by chemical vapor deposition (CVD) at 1100°C. Weak beam dark field microscopy reveals a regular misfit dislocation network, which resembles the honeycomb network of edge-type dislocations anticipated by the O-lattice theory. In contrast to the latter, however, the real network exhibits extended nodes where the misfit dislocations dissociate into misfit partial dislocations. Between the partials, high resolution transmission electron microscopy (HRTEM) reveals intrinsic and extrinsic stacking faults. Owing to the presence of these stacking faults, three different atomistic structures of the GeSi/Si interface coexist and compete for the interfacial area according to their energy. The observed configuration is shown to minimize the total energy of the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 165
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Goodman, D.W., in Heterostructures on Silicon: One Step further with Silicon, edited by Nissim, Y.I. and Rosencher, E. (Kluwer, Dordrecht, 1989).Google Scholar
2. Hull, R. and Bean, J.C., Crit. Rev. Sol. Stat. Mat. Sci. 17, 507 (1992).Google Scholar
3. Bollmann, W., Crystal Defects and Crystalline Interfaces (Springer, Berlin, 1970).Google Scholar
4. Ernst, F., Phil. Mag. A (1993), in press.Google Scholar
5. Hirth, J.P. and Lothe, J., The Theory of Dislocations, 2. ed. (Wiley, New York, 1982).Google Scholar
6. Amelinckx, S., Dislocations in particular structures, in Dislocations in Solids, edited by Nabarro, F.R.N. (North Holland, Amsterdam, 1979), p. 67.Google Scholar
7. Aerts, E., Delavignette, P., Siems, R., Amelinckx, S., J. Appl. Phys. 33, 3078 (1962).Google Scholar
8. Whelan, M.J., Proc. Roy. Soc. A 249, 114 (1959).Google Scholar
9. Cockayne, D.J.H., Ray, I.L.F., Whelan, M.J., Phil. Mag. 20, 1265 (1969).Google Scholar
10. Cockayne, D.J.H., The Weak Beam Method of Electron Microscopy, in Diffraction and Imaging Techniques in Materials Science, edited by Amelinckx, S., Gevers, R., Landuyt, J.v. (North Holland, Amsterdam, 1978), p. 153.Google Scholar
11. Stadelmann, P.A., Ultramicr. 21, 131 (1987).Google Scholar
12. Sankaran, R. and Laird, C., Phil. Mag. 29, 179 (1974).Google Scholar
13. Regheere, G. and Penisson, J.M., J. Physique 51, C1 (1990).Google Scholar
14. Trampert, A., Ernst, F., Flynn, C.P., Fischmeister, H.F., Rühle, M., Acta metall. mater. Suppl. 40, 227 (1992).CrossRefGoogle Scholar
15. Roos, B. and Ernst, F., J. Cryst. Growth (1993), in press.Google Scholar