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Disordering of InGaN/GaN Superlattices After High-Pressure Annealing

Published online by Cambridge University Press:  15 February 2011

M.D. McCluskey ,
L.T. Romano ,
B.S. Krusor ,
D. Hofstetter ,
D.P. Bour ,
M. Kneissl ,
N.M. Johnson ,
T. Suski  and
J. Jun
M.D. McCluskey
Affiliation:
Department of Physics, Washington State University, Pullman, WA 99164-2814
L.T. Romano
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304
B.S. Krusor
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304
D. Hofstetter
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304
D.P. Bour
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304
M. Kneissl
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304
N.M. Johnson
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304
T. Suski
Affiliation:
Unipress, Ul. Sokolowska 29, 01-142 Warsaw, Poland
J. Jun
Affiliation:
Unipress, Ul. Sokolowska 29, 01-142 Warsaw, Poland
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Abstract

Interdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15 min, only the zero-order InGaN peak is observed, a result of compositional disordering of the superlattice. Composition profiles from secondary ion mass spectrometry indicate significant diffusion of Mg from the p-type GaN layer into the quantum well region. This Mg diffusion may lead to an enhancement of superlattice disordering. For annealing temperatures between 1250 and 1300°C, a blue shift of the InGaN spontaneous emission peak is observed, consistent with interdiffusion of In and Ga in the quantum-well region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.42
Copyright
Copyright © Materials Research Society 1999

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