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Disorder and Strain Effects in the Optical Response of Thin CoSi Epitaxial Films on Si(111)

Published online by Cambridge University Press:  15 February 2011

S. Bocelli ,
G. Guizzetti ,
F. Marabelli ,
C. Schwarz ,
S. Goncalvesconto  and
H. Von Känel
S. Bocelli
Affiliation:
INFM - Dipartimento di Fisica “A.Volta”, Università di Pavia, I-27100 Pavia, Italy
G. Guizzetti
Affiliation:
INFM - Dipartimento di Fisica “A.Volta”, Università di Pavia, I-27100 Pavia, Italy
F. Marabelli
Affiliation:
INFM - Dipartimento di Fisica “A.Volta”, Università di Pavia, I-27100 Pavia, Italy
C. Schwarz
Affiliation:
Laboratorium für Festkörperphysik, Swiss Federal Institute of Technology (ETH), CH-8093 Zürich, Switzerland.
S. Goncalvesconto
Affiliation:
Laboratorium für Festkörperphysik, Swiss Federal Institute of Technology (ETH), CH-8093 Zürich, Switzerland.
H. Von Känel
Affiliation:
Laboratorium für Festkörperphysik, Swiss Federal Institute of Technology (ETH), CH-8093 Zürich, Switzerland.
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Abstract

Thin (CsCl)CoSi films of thicknesses from 44 to 105 Å were grown by MBE at room temperature onto ultrathin annealed CoSi2 templates. Also two CoSi2 films of about 100 Å with the CaF2 structure and with the defected CsCl structure were obtained epitaxially.

Far infrared reflectance and transmittance measured on such samples show optical structures between 240 and 370 cm-1. In the range 1.4–5 eV spectroscopic ellipsometry was performed, too. A change in the optical response was revealed among the different samples, which can be ascribed to strain, roughness and/or disorder at the interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 631
Copyright
Copyright © Materials Research Society 1996

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References

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