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Dislocations and Plasticity in Silicon Crystals by 3-D Mesoscopic Simulations

Published online by Cambridge University Press:  10 February 2011

L.P. Kubin ,
A. Moulin  and
P. Pirouz
L.P. Kubin
Affiliation:
LEM, CNRS-ONERA, 92322 F-Châtillon Cedex, [email protected], [email protected]
A. Moulin
Affiliation:
LEM, CNRS-ONERA, 92322 F-Châtillon Cedex, [email protected], [email protected]
P. Pirouz
Affiliation:
Dept. MSE, CWRU, Cleveland, OH 44106-7204, USA, [email protected]
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Abstract

Several problems related to the dynamics of dislocation sources and the plasticity of silicon crystals are investigated with the help of a mesoscopic simulation. The questions successively examined are the dynamics of a source of perfect dislocations and the conditions under which perfect or partial dislocations are emitted by a source. This leads to a discussion of the initial steps of the model proposed by Pirouz for mechanical twinning and, further, to the suggestion that a relation may exist between several transitions experimentally observed at low temperatures in elemental or compound semi-conductors: a change in the slope of the yield stress vs. temperature curves, a brittle-to-ductile transition and a change in the nature of the mobile dislocations. Finally, simulations are presented of the yield point phenomenon that is a well-known feature of Si and Ge crystals. The results are discussed in terms of evolutionary laws for the total dislocation density during straining.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 538: Symposium J – Multiscale Modelling of Materials , 1998 , 3
Copyright
Copyright © Materials Research Society 1999

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References

1. George, A. and Rabier, J., Rev. Phys. Appl. 22, p. 941 (1987).Google Scholar
2. Hirth, J. and Lothe, J., Theory of Dislocations, (J. Wiley & Sons, New-York, 1982), p. 544 Google Scholar
3. Pirouz, P., Scripta metall. 23, p. 401 (1987).Google Scholar
4. Kubin, L. P., Canova, G., Condat, M., Devincre, B., Pontikis, V. and Bréchet, Y., Solid State Phenomena, 22 & 23, p. 455 (1992).Google Scholar
5. Lépinoux, J. and Kubin, L.P., Scripta metall. 21, p. 833 (1987).Google Scholar
6. Devincre, B. in Computer Simulations in Materials Science, edited by Kirchner, H.O.K., Kubin, L.P. and Pontikis, V. (NATO-ASI, vol. E 308, Kluwer, NL-Dordrecht 1996), p. 309–323.Google Scholar
7. Devincre, B. and Kubin, L.P., Mat. Sci. Eng. A234–236, p. 8 (1997).Google Scholar
8. Moulin, A., Condat, M. and Kubin, L.P., Acta mater. 45, p. 2339 (1997).Google Scholar
9. Marklund, S., Solid State Com. 54, p. 555 (1985).Google Scholar
10. Imai, M. and Sumino, K., Phil. Mag A 47, p. 599 (1983).Google Scholar
11. Louchet, F., Phil. Mag A 43, p. 1289 (1981).Google Scholar
12. Hirsch, P.B., Ourmazd, A. and Pirouz, P., Inst. Phys. Conf. Ser. 60, p. 29 (1981).Google Scholar
13. Foreman, A.J.E., Phil. Mag. A 15, p. 1011 (1967).Google Scholar
14. Moulin, A., Doctoral Thesis, Ecole Centrale Paris (1992).Google Scholar
15. Pirouz, P., Inst. Phys. Conf. Ser. 104, p. 49 (1989).Google Scholar
16. Moulin, A., Condat, M. and Kubin, L.P., Phil Mag A, accepted.Google Scholar
17. Yasutake, K., Shimizu, S., Umeno, M. and Kawabe, H., J. Appl. Phys. 61, p. 940 (1987).Google Scholar
18. Wessel, K. and Alexander, H., Phil. Mag. A 35, p. 1523 (1977).Google Scholar
19. Pirouz, P., in Twinning in Advanced Materials, edited by Yoo, M.H. and Wuttig, M. (The Minerals, Metals & Materials Society, Pittsburgh PA 1994), p. 275–295.Google Scholar
20. Castaing, J., Veyssibre, P., Kubin, L.P. and Rabier, J., Phil. Mag. A 44, p. 1407 (1981).Google Scholar
21. Demenet, J.L., Doctoral Thesis, University of Poitiers (1987).Google Scholar
22. Pirouz, P. and Ning, X.J., Inst. Phys. Conf. Ser. 146, p. 69 (1995).Google Scholar
23. Ning, X.J. and Huvey, N., Phil. Mag. Let. 74, p. 241 (1996).Google Scholar
24. Pirouz, P., Samant, A.V., Hong, M.H., Moulin, A. and Kubin, L.P., submitted.Google Scholar
25. Suzuki, T., Yasutomi, T., Tokuoka, T. and Yonenaga, I., Phys. Stat. Sol. (a), in press.Google Scholar
26. Brochard, S., Junqua, N. and Grilhé, J., Phil. Mag. A 77, p. 911 (1988).Google Scholar
27. Hirsch, P.B. and Roberts, S.G., Phil. Mag. A 64, p. 55 (1991).Google Scholar
28. George, A. and Rabier, J., Rev. Phys. Appl. 22, p. 1327 (1987).Google Scholar
29. Alexander, H. and Haasen, P., Solid State Physics, 22, p. 27 (1968).Google Scholar
30. Mahajan, S., Brasen, D. and Haasen, P., Acta metall. 27, p. 1165 (1987).Google Scholar